公开(公告)号：US11107630B2

公开(公告)日：2021-08-31

申请号：US16417797

申请日：2019-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Anderson Lin ,  Chun-Ren Cheng ,  Chi-Yuan Shih ,  Shih-Fen Huang ,  Yi-Chuan Teng ,  Yi Heng Tsai ,  You-Ru Lin ,  Yen-Wen Chen ,  Fu-Chun Huang ,  Fan Hu ,  Ching-Hui Lin ,  Yan-Jie Liao

IPC: H01G4/012 ,  H01G4/228 ,  H01L49/02 ,  H01L21/3213 ,  H01L21/311 ,  H01G4/12 ,  H01L41/113 ,  H01L41/083 ,  H01L41/047

Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric metal-insulator-metal (MIM) device including a piezoelectric structure between a top electrode and a bottom electrode. The piezoelectric layer includes a top region overlying a bottom region. Outer sidewalls of the bottom region extend past outer sidewalls of the top region. The outer sidewalls of the top region are aligned with outer sidewalls of the top electrode. The piezoelectric layer is configured to help limit delamination of the top electrode from the piezoelectric layer.

公开(公告)号：US11099152B2

公开(公告)日：2021-08-24

申请号：US16679015

申请日：2019-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

IPC: H01L27/088 ,  G01N27/414 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US11097941B2

公开(公告)日：2021-08-24

申请号：US16398013

申请日：2019-04-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Hsien Chang ,  Tzu-Heng Wu ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Jung-Kuo Tu

IPC: B81B3/00

Abstract: A method includes forming a recess in a first substrate, bonding a micro-electro-mechanical systems (MEMS) substrate to the first substrate after forming the recess in the first substrate, forming an anti-stiction layer over the micro-electro-mechanical systems (MEMS) substrate, pattering the anti-stiction layer, etching the MEMS substrate to form a MEMS device, and bonding the MEMS device and the first substrate to a second substrate. The patterned anti-stiction layer is between the MEMS device and the second substrate.

公开(公告)号：US20210240959A1

公开(公告)日：2021-08-05

申请号：US17234641

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren Cheng ,  Jhubei Huang ,  Fu-Chun Huang

IPC: G06K9/00 ,  G01N27/414 ,  H01L41/113

Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.

公开(公告)号：US10520467B2

公开(公告)日：2019-12-31

申请号：US15912174

申请日：2018-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L51/05 ,  H01L51/00 ,  H01L21/84 ,  H01L27/12

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20180195998A1

公开(公告)日：2018-07-12

申请号：US15912174

申请日：2018-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L51/00 ,  H01L27/12 ,  H01L21/84

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L21/84 ,  H01L27/1203 ,  H01L51/0093

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

公开(公告)号：US20180172627A1

公开(公告)日：2018-06-21

申请号：US15386545

申请日：2016-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Ching-Hui Lin

IPC: G01N27/414 ,  H01L23/482

CPC classification number: G01N27/4145 ,  G01N27/4146 ,  H01L23/4825 ,  H01L29/786

Abstract: A semiconductor device including a biosensor with an on-chip reference electrode embedded within the semiconductor device, and associated manufacturing methods are provided. In some embodiments, a pair of source/drain regions is disposed within a device substrate and separated by a channel region. An isolation layer is disposed over the device substrate. A sensing well is disposed from an upper surface of the isolation layer overlying the channel region. A bio-sensing film is disposed along the upper surface of the isolation layer and extended along sidewall and lower surfaces of the sensing well. A reference electrode is disposed vertically between the bio-sensing film and the isolation layer.

公开(公告)号：US20160341656A1

公开(公告)日：2016-11-24

申请号：US14719991

申请日：2015-05-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Emerson Cheng ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Alex Kalnitsky ,  Allen Timothy Chang

IPC: G01N21/03 ,  H01L27/146 ,  G01N21/64

CPC classification number: B01L3/50 ,  B01L3/502715 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0887 ,  B01L2300/168 ,  B01L2300/1827 ,  B01L2400/0424 ,  G01N21/6428 ,  G01N21/6454 ,  G01N21/648 ,  G01N27/414 ,  G01N2021/6482 ,  H01L27/1203 ,  H01L27/1211

Abstract: The present disclosure relates to an integrated chip having an integrated optical bio-sensor, and an associated method of fabrication. In some embodiments, the integrated optical bio-sensor has a sensing device arranged within a semiconductor substrate. An optical waveguide structure is located over a first side of the semiconductor substrate at a position over the sensing device. A dielectric structure is disposed onto the optical waveguide structure at a position that separates the optical waveguide structure from a sample retention area configured to receive a sample solution.

Abstract translation: 本公开涉及具有集成光学生物传感器的集成芯片以及相关联的制造方法。 在一些实施例中，集成光学生物传感器具有布置在半导体衬底内的感测装置。 光学波导结构位于半导体衬底的位于传感器件上方的位置的第一侧上。 在将光波导结构与被配置为接收样品溶液的样品保留区域分离的位置处设置在光波导结构上的电介质结构。

公开(公告)号：US20160031704A1

公开(公告)日：2016-02-04

申请号：US14445226

申请日：2014-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Cheng Shen ,  Yi-Hsien Chang ,  Yi Heng Tsai ,  Tzu-Heng Wu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00238

Abstract: An integrated circuit (IC) structure is provided. The IC structure includes an IC substrate including active devices which are coupled together through a conductive interconnect structure arranged thereover. The conductive interconnect structure includes a series of horizontal conductive layers and dielectric regions arranged between neighboring horizontal conductive layers. The conductive interconnect structure includes an uppermost conductive horizontal region with a planar top surface region. A MEMS substrate is arranged over the IC substrate and includes a flexible or moveable structure that flexes or moves commensurate with a force applied to the flexible or moveable structure. The active devices of the IC substrate are arranged to establish analysis circuitry to facilitate electrical measurement of a capacitance between the uppermost conductive horizontal region and the flexible or moveable structure.

Abstract translation: 提供集成电路（IC）结构。 IC结构包括IC基板，其包括通过布置在其上的导电互连结构耦合在一起的有源器件。 导电互连结构包括布置在相邻的水平导电层之间的一系列水平导电层和电介质区域。 导电互连结构包括具有平坦顶表面区域的最上面的导电水平区域。 MEMS基板布置在IC基板上方，并且包括柔性或可移动的结构，其以施加到柔性或可移动结构的力相应地弯曲或移动。 IC基板的有源器件被布置成建立分析电路，以便于电测量最上面的导电水平区域和柔性或可移动结构之间的电容。

公开(公告)号：US11624726B2

公开(公告)日：2023-04-11

申请号：US17208596

申请日：2021-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  G01N27/30 ,  B01L3/00

Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.