公开(公告)号：US20210240959A1

公开(公告)日：2021-08-05

申请号：US17234641

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren Cheng ,  Jhubei Huang ,  Fu-Chun Huang

IPC: G06K9/00 ,  G01N27/414 ,  H01L41/113

Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.