公开(公告)号：US20210263022A1

公开(公告)日：2021-08-26

申请号：US17314825

申请日：2021-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng HUANG ,  Chin-Hua WEN ,  Tung-Tsun CHEN ,  Cheng-Hsiang HSIEH ,  Yu-Jie HUANG ,  Ching-Hui LIN

IPC: G01N33/543 ,  G01N27/416 ,  G01N27/414 ,  B01L3/00 ,  C12Q1/6837

Abstract: A fluidic cartridge and methods of operation are described. The fluidic cartridge includes a substrate having a plurality of contact pads designed to electrically couple with an analyzer, a semiconductor chip having a sensor array, and a reference electrode. The fluidic cartridge includes a first fluidic channel having an inlet and coupled to a second fluidic channel, the second fluidic channel being aligned such that the sensor array and the reference electrode are disposed within the second fluidic channel. A first plug is disposed at the first inlet. The first plug includes a compliant material configured to be punctured by a capillary without leaking fluid through the first plug.

公开(公告)号：US20210231603A1

公开(公告)日：2021-07-29

申请号：US17208596

申请日：2021-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Fu-Chun HUANG

IPC: G01N27/414 ,  G01N27/30 ,  B01L3/00

Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.

公开(公告)号：US20190033252A1

公开(公告)日：2019-01-31

申请号：US15661969

申请日：2017-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng HUANG ,  Yi-Hsien CHANG ,  Chin-Hua WEN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Tung-Tsun CHEN ,  Yu-Jie HUANG ,  Ching-Hui LIN ,  Sean CHENG ,  Hector CHANG

IPC: G01N27/414 ,  H01L41/08 ,  B01F13/00 ,  C12Q1/68 ,  G01N33/543 ,  B01L3/00

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

公开(公告)号：US20210240959A1

公开(公告)日：2021-08-05

申请号：US17234641

申请日：2021-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren Cheng ,  Jhubei Huang ,  Fu-Chun Huang

IPC: G06K9/00 ,  G01N27/414 ,  H01L41/113

Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.

公开(公告)号：US20210117636A1

公开(公告)日：2021-04-22

申请号：US16656882

申请日：2019-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Fu-Chun HUANG

IPC: G06K9/00 ,  G01N27/414 ,  H01L41/113

Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.

公开(公告)号：US20230288369A1

公开(公告)日：2023-09-14

申请号：US18132500

申请日：2023-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui LIN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Fu-Chun HUANG

IPC: G01N27/414 ,  G01N27/30 ,  B01L3/00

CPC classification number: G01N27/4145 ,  B01L3/502715 ,  G01N27/302 ,  G01N27/4148

Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.

公开(公告)号：US20210116413A1

公开(公告)日：2021-04-22

申请号：US17135498

申请日：2020-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng HUANG ,  Yi-Hsien CHANG ,  Chin-Hua WEN ,  Chun-Ren CHENG ,  Shih-Fen HUANG ,  Tung-Tsun CHEN ,  Yu-Jie HUANG ,  Ching-Hui LIN ,  Sean CHENG ,  Hector CHANG

IPC: G01N27/414 ,  H01L41/09 ,  B01L3/00 ,  B01F11/02 ,  B01F13/00 ,  G01N33/543 ,  H01L41/08

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.