公开(公告)号：US09570534B2

公开(公告)日：2017-02-14

申请号：US14946231

申请日：2015-11-19

Applicant: Samsung Display Co., Ltd.

Inventor： Kyu-Sik Cho ,  Won-Kyu Lee ,  Tae-Hoon Yang ,  Byoung-Kwon Choo ,  Sang-Ho Moon ,  Bo-Kyung Choi ,  Yong-Hwan Park ,  Joon-Hoo Choi ,  Min-Chul Shin ,  Yun-Gyu Lee

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3279 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265

Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Abstract translation: 一种有机发光二极管显示器包括：基板，分别包括形成在第一和第二区域上的第一和第二栅电极，分别形成在第一和第二栅电极上的第一和第二栅极绝缘体， 以及分别形成在所述第一和第二栅极绝缘体上的第二半导体层，所述第一半导体层分别包括第一沟道区，所述第二半导体层包括第二沟道区，在所述衬底上形成的层间绝缘体，以及至少部分 第一和第二半导体层，分别形成在第一和第二沟道区上并由层间绝缘体包围的第一和第二蚀刻停止层，以及第一和第二源电极和第一和第二漏电极接触 第一和第二半导体层分别通过层间绝缘体。

公开(公告)号：US20140284558A1

公开(公告)日：2014-09-25

申请号：US13933057

申请日：2013-07-01

Applicant: Samsung Display Co., Ltd.

Inventor： Tae-Hoon Yang ,  Bo-Kyung Choi ,  Jae-Wan Jung ,  Ki-Yong Lee

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

Abstract: A thin film transistor (TFT) includes a semiconductor on a substrate; an ohmic contact overlapping at least a portion of the semiconductor; a source electrode and a drain electrode on the ohmic contact; a gate insulating layer covering the semiconductor; and a gate electrode overlapping the semiconductor and between the source electrode and the drain electrode on the gate insulating layer, wherein the gate electrode is laterally separated from the drain electrode by a first distance and is laterally separated from the source electrode by a second distance.

Abstract translation: 薄膜晶体管（TFT）在衬底上包括半导体; 与所述半导体的至少一部分重叠的欧姆接触; 欧姆接触上的源电极和漏电极; 覆盖半导体的栅极绝缘层; 以及在所述栅极绝缘层上与所述半导体和所述源极电极和所述漏极电极重叠的栅电极，其中，所述栅电极与所述漏电极横向分开第一距离，并且与所述源极电极横向分离第二距离。

公开(公告)号：US10281956B2

公开(公告)日：2019-05-07

申请号：US14693367

申请日：2015-04-22

Applicant: Samsung Display Co., Ltd.

Inventor： Tae-Hoon Yang ,  So-Youn Jung ,  Jae-Wan Jung ,  Ki-Yong Lee ,  Sang-Wol Lee

IPC: G06F1/16 ,  G02F1/1333 ,  H04M1/02

Abstract: A display device includes a display panel having a bendable part and flat parts, at least one flat part disposed at each side of the bendable part; and a panel guide attached to surfaces of the flat parts of the display panel, in which the display panel is attached to the panel guide when the bendable part is in a state of being tensioned at a reference strain included in an elastic range.

公开(公告)号：US09576797B2

公开(公告)日：2017-02-21

申请号：US14721621

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/477 ,  H01L27/32

CPC classification number: H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract translation: 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

公开(公告)号：US09035311B2

公开(公告)日：2015-05-19

申请号：US13841121

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC: H01L29/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/52 ,  H01L27/3265 ,  H01L2227/323

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract translation: 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US09411376B2

公开(公告)日：2016-08-09

申请号：US14305613

申请日：2014-06-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Tae-Hyeog Jung ,  Tae-Hoon Yang ,  Ki-Yong Lee ,  Sang-Wol Lee

IPC: G02F1/1335 ,  G06F1/16 ,  G09G5/00 ,  G02F1/1333

CPC classification number: G06F1/1652 ,  G02F1/133305 ,  G02F2001/133314 ,  G06F1/1601 ,  G06F1/1613 ,  G06F1/1643 ,  G09G5/00

Abstract: A display module may include a flexible panel that is bent in a direction such that a compressive stress is exerted on a display unit within a housing.

Abstract translation: 显示模块可以包括柔性面板，该柔性面板沿着使得压缩应力施加在壳体内的显示单元上的方向弯曲。

公开(公告)号：US09070904B2

公开(公告)日：2015-06-30

申请号：US14193227

申请日：2014-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyu-Sik Cho ,  Joon-Hoo Choi ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Bo-Kyung Choi ,  Yong-Hwan Park ,  Sang-Ho Moon

IPC: H01L51/40 ,  H01L51/56 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L51/56 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3265

Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

Abstract translation: OLED显示器包括在具有第一栅电极，第二栅极和第一电容器电极的基板上的第一多晶硅层图案，栅极绝缘层图案，包括第一有源层的第二多晶硅层图案，第二有源层 以及电容器多晶虚拟层，在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案，在第二有源层的预定区域上的第二源极和漏极接触层，以及 电容器多晶虚拟层上的电容器非晶虚拟层，以及包括第一源极/漏极，第二源极/漏极和第二电容器电极的数据金属层图案。

公开(公告)号：US20160079338A1

公开(公告)日：2016-03-17

申请号：US14946231

申请日：2015-11-19

Applicant: Samsung Display Co., Ltd.

Inventor： Kyu-Sik Cho ,  Won-Kyu Lee ,  Tae-Hoon Yang ,  Byoung-Kwon Choo ,  Sang-Ho Moon ,  Bo-Kyung Choi ,  Yong-Hwan Park ,  Joon-Hoo Choi ,  Min-Chul Shin ,  Yun-Gyu Lee

IPC: H01L27/32

CPC classification number: H01L27/3279 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265

Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Abstract translation: 一种有机发光二极管显示器包括：基板，分别包括形成在第一和第二区域上的第一和第二栅电极，分别形成在第一和第二栅电极上的第一和第二栅极绝缘体， 以及分别形成在所述第一和第二栅极绝缘体上的第二半导体层，所述第一半导体层分别包括第一沟道区，所述第二半导体层包括第二沟道区，在所述衬底上形成的层间绝缘体，以及至少部分 第一和第二半导体层，分别形成在第一和第二沟道区上并由层间绝缘体包围的第一和第二蚀刻停止层，以及第一和第二源电极和第一和第二漏电极接触 第一和第二半导体层分别通过层间绝缘体。

公开(公告)号：US20140363936A1

公开(公告)日：2014-12-11

申请号：US14303233

申请日：2014-06-12

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Young-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-RaK Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

Abstract translation: 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

公开(公告)号：US20140308445A1

公开(公告)日：2014-10-16

申请号：US14318086

申请日：2014-06-27

Applicant: Samsung Display Co., Ltd.

Inventor： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Ivan Maidanchuk ,  Dong-Hyun Lee ,  Kii-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52 ,  Y10T137/6416

Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

Abstract translation: 当原料通过原子层沉积沉积在基板上时，沉积设备和用于沉积设备的罐能够保持供应到沉积室的反应气体中包含的预定量的源材料，包括主体，源 存储器，其被配置为存储源材料，设置在主体外部的加热器;以及第一馈送控制器，被配置为控制从源存储器供应到主体的源材料。