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公开(公告)号：US20220238501A1
公开(公告)日：2022-07-28
申请号：US17583545
申请日：2022-01-25
发明人： Stefan Hampl , Marco Haubold , Kerstin Kaemmer , Norbert Thyssen
摘要： A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.
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公开(公告)号：US10276494B2
公开(公告)日：2019-04-30
申请号：US15654526
申请日：2017-07-19
发明人： Kerstin Kaemmer , Martin Bartels , Henning Feick
IPC分类号： G11C17/16 , H01L23/525 , H01L27/112 , H01L27/102 , G11C17/18
摘要： Memory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable element.
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公开(公告)号：US20140167184A1
公开(公告)日：2014-06-19
申请号：US13959485
申请日：2013-08-05
IPC分类号： H01L21/28 , H01L27/088 , H01L21/283
CPC分类号： H01L21/28008 , H01L21/283 , H01L27/0207 , H01L27/088 , H01L29/6659
摘要： A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density.
摘要翻译： 公开了一种半导体器件和制造半导体器件的方法。 制造半导体器件的方法包括在衬底上形成材料层，用第一主图案构图第一半全局区域，并用第二主图案构图第二半全局区域，其中第一主图案不同于 第二个主要模式。 该方法还包括在第一半全局区域中引入第一虚拟图案，使得第一主图案和第一半全局区域中的第一虚拟图案的第一侧壁区域表面密度和第一半全局区域的第二侧壁区域表面密度 第二个半全球区域的第二主要模式基本上是相同的密度。
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公开(公告)号：US20210003466A1
公开(公告)日：2021-01-07
申请号：US17024228
申请日：2020-09-17
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
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5.发明申请公开(公告)号：US20180222744A1
公开(公告)日：2018-08-09
申请号：US15892102
申请日：2018-02-08
发明人： Marco Haubold , Henning Feick , Kerstin Kaemmer
IPC分类号： B81B3/00
CPC分类号： B81B3/0021 , B81B3/0086 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264
摘要： A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.
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公开(公告)号：US10329140B2
公开(公告)日：2019-06-25
申请号：US15892102
申请日：2018-02-08
发明人： Marco Haubold , Henning Feick , Kerstin Kaemmer
摘要： A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.
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公开(公告)号：US20180061756A1
公开(公告)日：2018-03-01
申请号：US15654526
申请日：2017-07-19
发明人： Kerstin Kaemmer , Martin Bartels , Henning Feick
IPC分类号： H01L23/525 , H01L27/112 , H01L27/102 , G11C17/16
CPC分类号： H01L23/5252 , G11C17/16 , G11C17/18 , H01L27/1026 , H01L27/11206
摘要： One time programmable memory cell and memory arrayMemory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable element.
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8.发明申请METHOD FOR PROCESSING A CARRIER, A CARRIER, AND A SPLIT GATE FIELD EFFECT TRANSISTOR STRUCTURE 有权用于处理载体，载体和分离栅场效应晶体管结构的方法公开(公告)号：US20150371995A1
公开(公告)日：2015-12-24
申请号：US14309968
申请日：2014-06-20
IPC分类号： H01L27/112 , H01L21/02 , H01L29/167 , H01L29/51 , H01L29/423 , H01L29/36 , H01L21/265 , H01L29/66
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。
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9.发明授权Method for processing a carrier, a carrier, and a split gate field effect transistor structure 有权用于处理载波，载波和分离栅场效应晶体管结构的方法公开(公告)号：US09202815B1
公开(公告)日：2015-12-01
申请号：US14309968
申请日：2014-06-20
IPC分类号： H01L29/66 , H01L27/112 , H01L21/265 , H01L21/02 , H01L29/51 , H01L29/423 , H01L29/36 , H01L29/167
CPC分类号： H01L27/11206 , H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/26513 , H01L21/28211 , H01L21/2822 , H01L23/5256 , H01L29/42368 , H01L29/4238 , H01L29/512 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.
摘要翻译： 根据各种实施例，一种用于处理载体的方法可以包括：用氟掺杂载体，使得载体的第一表面区域是氟掺杂的，载体的第二表面区域是不含氟掺杂或 比第一表面区域少掺杂氟; 以及氧化所述载体以从所述载体的所述第一表面区域以第一厚度生长第一栅极氧化物层，并且与所述载体的所述第二表面区域同时地具有不同于所述第一厚度的第二厚度。
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公开(公告)号：US20230251154A1
公开(公告)日：2023-08-10
申请号：US18304989
申请日：2023-04-21
CPC分类号： G01L9/0073 , G01N33/0027 , G01L9/0042
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
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