- 专利标题： SEMICONDUCTOR DEVICE, PRESSURE SENSOR, MICROPHONE, ACCELERATION SENSOR AND METHOD FOR FORMING A SEMICONDUCTOR DEVICE
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申请号： US15892102申请日： 2018-02-08
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公开(公告)号： US20180222744A1公开(公告)日： 2018-08-09
- 发明人: Marco Haubold , Henning Feick , Kerstin Kaemmer
- 申请人： Infineon Technologies AG
- 优先权： DE102017102545.6 20170209
- 主分类号： B81B3/00
- IPC分类号： B81B3/00
摘要：
A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.
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