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公开(公告)号：US20210003466A1
公开(公告)日：2021-01-07
申请号：US17024228
申请日：2020-09-17
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
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公开(公告)号：US11774308B2
公开(公告)日：2023-10-03
申请号：US17024228
申请日：2020-09-17
CPC分类号： G01L9/0073 , G01L9/0042 , G01N33/0027
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
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3.发明申请公开(公告)号：US20200156933A1
公开(公告)日：2020-05-21
申请号：US16748087
申请日：2020-01-21
摘要： A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
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4.发明授权公开(公告)号：US10584028B2
公开(公告)日：2020-03-10
申请号：US15975243
申请日：2018-05-09
摘要： A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
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5.发明申请公开(公告)号：US20180327258A1
公开(公告)日：2018-11-15
申请号：US15975243
申请日：2018-05-09
CPC分类号： B81C1/00333 , B32B15/043 , B81B7/0032 , B81C1/00301 , H01L23/315
摘要： A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
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公开(公告)号：US20230251154A1
公开(公告)日：2023-08-10
申请号：US18304989
申请日：2023-04-21
CPC分类号： G01L9/0073 , G01N33/0027 , G01L9/0042
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
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公开(公告)号：US10859457B2
公开(公告)日：2020-12-08
申请号：US15808044
申请日：2017-11-09
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
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8.发明授权公开(公告)号：US10793429B2
公开(公告)日：2020-10-06
申请号：US16748087
申请日：2020-01-21
摘要： A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
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公开(公告)号：US20180136064A1
公开(公告)日：2018-05-17
申请号：US15808044
申请日：2017-11-09
CPC分类号： G01L9/0073 , G01L9/0042 , G01N33/0027
摘要： A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. A frame structure on the first surface includes a first loop portion laterally surrounding a first area that includes the sensor unit. A communicating channel accesses the first area through at least one of a lateral port in the first loop portion and a base port in the sensor substrate. A lid structure completely covers the frame structure and the first area.
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