发明申请
- 专利标题： Dummy Structures and Methods
- 专利标题（中）： 虚构结构与方法
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申请号： US13959485申请日： 2013-08-05
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公开(公告)号： US20140167184A1公开(公告)日： 2014-06-19
- 发明人: Frank Huebinger , Steffen Rothenhaeusser , Kerstin Kaemmer
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L27/088 ; H01L21/283
摘要：
A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density.
公开/授权文献
- US09000597B2 Dummy structures and methods 公开/授权日：2015-04-07
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