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公开(公告)号：US20180061756A1
公开(公告)日：2018-03-01
申请号：US15654526
申请日：2017-07-19
发明人： Kerstin Kaemmer , Martin Bartels , Henning Feick
IPC分类号： H01L23/525 , H01L27/112 , H01L27/102 , G11C17/16
CPC分类号： H01L23/5252 , G11C17/16 , G11C17/18 , H01L27/1026 , H01L27/11206
摘要： One time programmable memory cell and memory arrayMemory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable element.
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公开(公告)号：US09984917B2
公开(公告)日：2018-05-29
申请号：US14283242
申请日：2014-05-21
发明人： Christian Kuehn , Martin Bartels , Henning Feick , Dirk Offenberg , Anton Steltenpohl , Hans Taddiken , Ines Uhlig
IPC分类号： H01L21/76 , H01L21/762 , H01L29/06 , H01L21/265
CPC分类号： H01L21/76237 , H01L21/26506 , H01L21/2652 , H01L21/26586 , H01L29/0607 , H01L29/0649
摘要： A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.
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公开(公告)号：US20230119033A1
公开(公告)日：2023-04-20
申请号：US18086211
申请日：2022-12-21
发明人： Dominik Heiss , Martin Bartels , Christoph Glacer , Christoph Kadow , Matthias Markert , Hans Taddiken , Hans-Dieter Wohlmuth
摘要： A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.
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公开(公告)号：US20210320250A1
公开(公告)日：2021-10-14
申请号：US16844450
申请日：2020-04-09
发明人： Dominik Heiss , Martin Bartels , Christoph Glacer , Christoph Kadow , Matthias Markert , Hans Taddiken , Hans-Dieter Wohlmuth
IPC分类号： H01L45/00
摘要： A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.
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公开(公告)号：US10276494B2
公开(公告)日：2019-04-30
申请号：US15654526
申请日：2017-07-19
发明人： Kerstin Kaemmer , Martin Bartels , Henning Feick
IPC分类号： G11C17/16 , H01L23/525 , H01L27/112 , H01L27/102 , G11C17/18
摘要： Memory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable element.
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公开(公告)号：US20180286941A1
公开(公告)日：2018-10-04
申请号：US15933998
申请日：2018-03-23
发明人： Hans Taddiken , Martin Bartels , Andrea Cattaneo , Henning Feick , Christian Kuehn , Anton Steltenpohl
CPC分类号： H01L28/20 , H01L23/5228 , H01L23/66 , H01L27/0641 , H01L2924/1421
摘要： A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.
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公开(公告)号：US09882600B2
公开(公告)日：2018-01-30
申请号：US14172925
申请日：2014-02-05
发明人： Christian Kuehn , Martin Bartels , Henning Feick , Dirk Offenberg , Anton Steltenpohl , Hans Taddiken , Ines Uhlig
IPC分类号： H04B1/00 , H04B1/44 , H01L21/324 , H01L29/78 , H01L29/10
CPC分类号： H04B1/44 , H01L21/324 , H01L29/1079 , H01L29/78
摘要： According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.
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公开(公告)号：US11563174B2
公开(公告)日：2023-01-24
申请号：US16844450
申请日：2020-04-09
发明人： Dominik Heiss , Martin Bartels , Christoph Glacer , Christoph Kadow , Matthias Markert , Hans Taddiken , Hans-Dieter Wohlmuth
IPC分类号： H01L45/00
摘要： A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.
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公开(公告)号：US10804354B2
公开(公告)日：2020-10-13
申请号：US15933998
申请日：2018-03-23
发明人： Hans Taddiken , Martin Bartels , Andrea Cattaneo , Henning Feick , Christian Kuehn , Anton Steltenpohl
IPC分类号： H01L23/66 , H01L49/02 , H01L27/06 , H01L23/522
摘要： A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.
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10.发明申请公开(公告)号：US20150340277A1
公开(公告)日：2015-11-26
申请号：US14283242
申请日：2014-05-21
发明人： Christian Kuehn , Martin Bartels , Henning Feick , Dirk Offenberg , Anton Steltenpohl , Hans Taddiken , Ines Uhlig
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L21/76237 , H01L21/26506 , H01L21/2652 , H01L21/26586 , H01L29/0607 , H01L29/0649
摘要： A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.
摘要翻译： 根据各种实施例的用于制造半导体器件的方法可以包括：在半导体衬底的第一区域中形成开口，所述开口具有至少一个侧壁和底部; 将掺杂剂原子注入到所述开口的至少一个侧壁和底部中; 将所述半导体衬底的与所述第一区域横向相邻的第二区域的至少一部分配置为非晶区域或多晶区域中的至少一个; 以及在半导体衬底的第一和第二区域中的至少一个上形成互连。
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