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公开(公告)号：US12156488B2
公开(公告)日：2024-11-26
申请号：US18086211
申请日：2022-12-21
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Martin Bartels , Christoph Glacer , Christoph Kadow , Matthias Markert , Hans Taddiken , Hans-Dieter Wohlmuth
Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.
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公开(公告)号：US20230389451A1
公开(公告)日：2023-11-30
申请号：US17826355
申请日：2022-05-27
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Matthias Markert
IPC: H01L45/00
CPC classification number: H01L45/1226 , H01L45/06 , H01L45/1286 , H01L45/1683
Abstract: A method includes providing a semiconductor substrate comprising a main surface, forming a dielectric region on the main surface, forming a recess in the dielectric region, forming a strip of phase change material within the recess, forming a heating element that is thermally coupled to the strip of phase change material, forming an interconnection region over the main surface before or after forming the recess, the interconnection region including a metallization layer and a dielectric layer, electrically connecting the strip of phase change material to a connecting one of the metallization layers from the interconnection region, and completing formation of the interconnection region after electrically connecting the strip of phase change material, wherein completing formation of the interconnection region includes forming an outer one of the dielectric layers from the interconnection region that is disposed over the connecting one of the metallization layers and comprises a planar upper surface.
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公开(公告)号：US11963466B2
公开(公告)日：2024-04-16
申请号：US17330610
申请日：2021-05-26
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Christoph Kadow , Matthias Markert
CPC classification number: H10N70/253 , H10N70/066 , H10N70/823 , H10N70/8265 , H10N70/8613 , H10N70/231 , H10N70/8616 , H10N70/8828
Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.
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公开(公告)号：US11730068B2
公开(公告)日：2023-08-15
申请号：US17350398
申请日：2021-06-17
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Christoph Kadow , Matthias Markert
CPC classification number: H10N70/011 , H01L23/66 , H10N70/231 , H10N70/823 , H10N70/8413 , H10N70/8828
Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.
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公开(公告)号：US20230119033A1
公开(公告)日：2023-04-20
申请号：US18086211
申请日：2022-12-21
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Martin Bartels , Christoph Glacer , Christoph Kadow , Matthias Markert , Hans Taddiken , Hans-Dieter Wohlmuth
Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.
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Patent Agency Ranking
公开(公告)号：US20210320250A1
公开(公告)日：2021-10-14
申请号：US16844450
申请日：2020-04-09
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Martin Bartels , Christoph Glacer , Christoph Kadow , Matthias Markert , Hans Taddiken , Hans-Dieter Wohlmuth
IPC: H01L45/00
Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.
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公开(公告)号：US20230165082A1
公开(公告)日：2023-05-25
申请号：US17938462
申请日：2022-10-06
Applicant: Infineon Technologies AG
Inventor： Matthias Markert , Cornelius Fuchs , Jakob Kriz
IPC: H01L27/32
CPC classification number: H01L27/3276 , H01L2227/323
Abstract: A substrate arrangement for a micro display including a semiconductor substrate, a back end of line (BEOL) stack on the semiconductor substrate and wherein the BEOL stack comprises structured wiring layers, an insulating material structure (IMS), and a recess in the IMS, wherein the structured wiring layers are stacked and embedded in the insulating material structure, and wherein an upmost structured wiring layer of the structured wiring layers includes contact pads, and wherein the recess extends to a first set of contact pads; and a conductive layer on the surface of the BEOL stack, wherein the conductive layer includes a first portion including a contact pad array and wherein the conductive layer includes a second portion that is arranged on the first set of contact pads of the BEOL stack, and wherein the first portion of the conductive layer is electrically separated from the second portion of the conductive layer.
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公开(公告)号：US11563174B2
公开(公告)日：2023-01-24
申请号：US16844450
申请日：2020-04-09
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Martin Bartels , Christoph Glacer , Christoph Kadow , Matthias Markert , Hans Taddiken , Hans-Dieter Wohlmuth
IPC: H01L45/00
Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.
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公开(公告)号：US20220407004A1
公开(公告)日：2022-12-22
申请号：US17350398
申请日：2021-06-17
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Christoph Kadow , Matthias Markert
Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals
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公开(公告)号：US20210376234A1
公开(公告)日：2021-12-02
申请号：US17330610
申请日：2021-05-26
Applicant: Infineon Technologies AG
Inventor： Dominik Heiss , Christoph Kadow , Matthias Markert
IPC: H01L45/00
Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.
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