- 专利标题: METHOD FOR WAFER BONDING AND COMPOUND SEMICONDUCTOR WAFER
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申请号: US17583545申请日: 2022-01-25
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公开(公告)号: US20220238501A1公开(公告)日: 2022-07-28
- 发明人: Stefan Hampl , Marco Haubold , Kerstin Kaemmer , Norbert Thyssen
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 优先权: EP21153413.6 20210126
- 主分类号: H01L25/16
- IPC分类号: H01L25/16 ; H01L23/00
摘要:
A method for wafer bonding includes: providing a semiconductor wafer having a first main face; fabricating at least one semiconductor device in the semiconductor wafer, wherein the semiconductor device is arranged at the first main face; generating trenches and a cavity in the semiconductor wafer such that the at least one semiconductor device is connected to the rest of the semiconductor wafer by no more than at least one connecting pillar; arranging the semiconductor wafer on a carrier wafer such that the first main face faces the carrier wafer; attaching the at least one semiconductor device to the carrier wafer; and removing the at least one semiconductor device from the semiconductor wafer by breaking the at least one connecting pillar.
公开/授权文献
- US12068296B2 Method for wafer bonding and compound semiconductor wafer 公开/授权日:2024-08-20
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