公开(公告)号：US20240249920A1

公开(公告)日：2024-07-25

申请号：US18099039

申请日：2023-01-19

Applicant: Applied Materials, Inc.

Inventor： Wenting HOU ,  Jianxin LEI

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/3342

Abstract: Apparatus and methods for processes of depositing a film on a substrate in an electronic device fabrication process are provided herein, and more particularly, apparatus and methods for improving deposited film uniformity within high aspect ratio features. In some embodiments, a metal layer deposition process is performed to deposit a metal layer in a feature definition formed in a substrate. A mask layer deposition process is performed to deposit a carbon layer on the metal layer. Following the mask layer deposition process, a resputtering process is performed by applying a radio frequency (RF) signal to the substrate in a presence of an inert gas. Following performing the resputtering process, an etching process is performed to remove the carbon.

公开(公告)号：US20240136223A1

公开(公告)日：2024-04-25

申请号：US17970872

申请日：2022-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhaoxuan WANG ,  Jianxin LEI ,  Wenting HOU ,  Sung-Kwan KANG ,  Anand Nilakantan IYER

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76841 ,  H01L21/76829 ,  H01L23/53266

Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.

公开(公告)号：US20240087955A1

公开(公告)日：2024-03-14

申请号：US18241343

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Yi XU ,  Xianyuan ZHAO ,  Zhimin QI ,  Aixi ZHANG ,  Geraldine VASQUEZ ,  Dien-Yeh WU ,  Wei LEI ,  Xingyao GAO ,  Shirish PETHE ,  Wenting HOU ,  Chao DU ,  Tsung-Han YANG ,  Kyoung-Ho BU ,  Chen-Han LIN ,  Jallepally RAVI ,  Yu LEI ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

公开(公告)号：US20220081756A1

公开(公告)日：2022-03-17

申请号：US17021661

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting HOU ,  Jianxin LEI ,  Jothilingam RAMALINGAM ,  Prashanth KOTHNUR ,  William R. JOHANSON

IPC: C23C14/18 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35

Abstract: Method and apparatus that forms low resistivity tungsten film on substrates. In some embodiments, a method of reducing resistivity of tungsten includes generating a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz and a magnetron, applying bias power at frequency of approximately 13.56 MHz to a substrate, and sputtering a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US20240006236A1

公开(公告)日：2024-01-04

申请号：US18133065

申请日：2023-04-11

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han YANG ,  Junyeong YUN ,  Rongjun WANG ,  Yi XU ,  Yu LEI ,  Wenting HOU ,  Xianmin TANG

IPC: H01L21/768 ,  H01J37/32

CPC classification number: H01L21/76876 ,  H01J37/321 ,  H01L21/76843 ,  H01L21/76895 ,  H01J2237/338 ,  H01J37/32899

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one feature. The method includes forming the nucleation layer via a cyclic vapor deposition process. The cyclic vapor deposition process includes forming a portion of the nucleation layer and then exposing the exposing the nucleation layer a chemical vapor transport (CVT) process to remove impurities from the portion of the nucleation layer. The CVT process may be performed at a temperature of 400 degrees Celsius or less and comprises forming a plasma from a processing gas comprising greater than or equal to 90% of hydrogen gas of a total flow of hydrogen gas and oxygen.

公开(公告)号：US20220341025A1

公开(公告)日：2022-10-27

申请号：US17857370

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting HOU ,  Jianxin LEI ,  Jothilingam RAMALINGAM ,  Prashanth KOTHNUR ,  William R. JOHANSON

IPC: C23C14/18 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

Abstract: Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US20240282709A1

公开(公告)日：2024-08-22

申请号：US18112564

申请日：2023-02-22

Applicant: Applied Materials, Inc.

Inventor： Zhaoxuan WANG ,  Jianxin LEI ,  Wenting HOU ,  David Maxwell GAGE ,  Zihao HE

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02381 ,  H01L21/02414 ,  H01L21/02631 ,  H01L21/32051 ,  H01L21/3212 ,  H01L21/76834 ,  H01L21/7684 ,  H01L23/5329

Abstract: A method to produce a layered substrate includes depositing a ruthenium layer having a first average grain size on a substrate; annealing the substrate at a temperature and for a period of time sufficient to produce an annealed ruthenium layer having a second average grain size which is greater than the first average grain size; and removing a portion of the ruthenium layer by chemical mechanical planarization to form a planarized ruthenium layer, to produce the layered substrate. A layered substrate is also disclosed.

公开(公告)号：US20240234204A9

公开(公告)日：2024-07-11

申请号：US17970872

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Zhaoxuan WANG ,  Jianxin LEI ,  Wenting HOU ,  Sung-Kwan KANG ,  Anand Nilakantan IYER

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76841 ,  H01L21/76829 ,  H01L23/53266

Abstract: A method to produce a layered substrate, which includes the steps of depositing a diffusion barrier layer on the substrate; depositing an underlayer comprising a Group 6 metal on the barrier layer; and depositing a ruthenium layer comprising ruthenium on the underlayer, to produce the layered substrate. A layered substrate is also disclosed.

公开(公告)号：US20210123139A1

公开(公告)日：2021-04-29

申请号：US16997389

申请日：2020-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Chunming ZHOU ,  Wenting HOU ,  Sree Rangasai KESAPRAGADA

IPC: C23C28/02 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  C23C16/01 ,  C23C16/06 ,  C23C14/16

Abstract: Methods for processing a substrate are provided herein. The method, for example, includes selectively depositing a first layer of metal within at least one feature on a substrate; depositing a second layer of metal atop the first layer of metal and at least on sidewalls defining the at least one feature; depositing a third layer of metal atop the second layer of metal and within the feature to at least completely fill the at least one feature; and removing some of the second layer of metal or some of the second layer of metal and some of the third layer of metal so that remaining portions of the second layer of metal and the third layer of metal are flush with a top surface of the at least one feature.

公开(公告)号：US20170145553A1

公开(公告)日：2017-05-25

申请号：US15347582

申请日：2016-11-09

Applicant: Applied Materials, Inc.

Inventor： Zhendong LIU ,  Wenting HOU ,  Jianxin LEI ,  Donny YOUNG ,  William M. LU

IPC: C23C4/134 ,  C23C16/455 ,  C23C16/50 ,  C25D17/00 ,  C23C18/48 ,  C23C14/34 ,  C25D3/02 ,  C23C16/44 ,  C23C18/31

CPC classification number: C23C4/134 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/45525 ,  C23C16/50 ,  C23C18/1646 ,  C23C18/1689 ,  C23C18/31 ,  C23C18/48 ,  C25D3/02 ,  C25D5/48 ,  C25D7/00 ,  C25D17/00 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32559 ,  H01J37/32871 ,  H01J37/3426 ,  H01J37/3441

Abstract: Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.