公开(公告)号：US20240006236A1

公开(公告)日：2024-01-04

申请号：US18133065

申请日：2023-04-11

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han YANG ,  Junyeong YUN ,  Rongjun WANG ,  Yi XU ,  Yu LEI ,  Wenting HOU ,  Xianmin TANG

IPC: H01L21/768 ,  H01J37/32

CPC classification number: H01L21/76876 ,  H01J37/321 ,  H01L21/76843 ,  H01L21/76895 ,  H01J2237/338 ,  H01J37/32899

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one feature. The method includes forming the nucleation layer via a cyclic vapor deposition process. The cyclic vapor deposition process includes forming a portion of the nucleation layer and then exposing the exposing the nucleation layer a chemical vapor transport (CVT) process to remove impurities from the portion of the nucleation layer. The CVT process may be performed at a temperature of 400 degrees Celsius or less and comprises forming a plasma from a processing gas comprising greater than or equal to 90% of hydrogen gas of a total flow of hydrogen gas and oxygen.