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公开(公告)号:US20200013589A1
公开(公告)日:2020-01-09
申请号:US16401871
申请日:2019-05-02
Applicant: Applied Materials, Inc.
Inventor: Karthikeyan BALARAMAN , Sathyanarayana BINDIGANAVALE , Rajasekhar PATIBANDLA , Balamurugan RAMASAMY , Kartik SHAH , Umesh M. KELKAR , Mats LARSSON , Kevin A. PAPKE , William M. LU
Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.
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公开(公告)号:US20200024725A1
公开(公告)日:2020-01-23
申请号:US16456769
申请日:2019-06-28
Applicant: Applied Materials, Inc.
Inventor: Brian T. WEST , Lizhong SUN , William M. LU
Abstract: Embodiments of the disclosure generally relate to a process kit including a shield serving as an anode in a physical deposition chamber. The shield has a cylindrical band, the cylindrical band having a top and a bottom, the cylindrical band sized to encircle a sputtering surface of a sputtering target disposed adjacent the top and a substrate support disposed at the bottom, the cylindrical band having an interior surface. A texture is disposed on the interior surface. The texture has a plurality of features. A film is provided on a portion of the features. The film includes a porosity of about 2% to about 3.5%.
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公开(公告)号:US20170145553A1
公开(公告)日:2017-05-25
申请号:US15347582
申请日:2016-11-09
Applicant: Applied Materials, Inc.
Inventor: Zhendong LIU , Wenting HOU , Jianxin LEI , Donny YOUNG , William M. LU
IPC: C23C4/134 , C23C16/455 , C23C16/50 , C25D17/00 , C23C18/48 , C23C14/34 , C25D3/02 , C23C16/44 , C23C18/31
CPC classification number: C23C4/134 , C23C14/34 , C23C14/564 , C23C16/4404 , C23C16/45525 , C23C16/50 , C23C18/1646 , C23C18/1689 , C23C18/31 , C23C18/48 , C25D3/02 , C25D5/48 , C25D7/00 , C25D17/00 , H01J37/32477 , H01J37/32504 , H01J37/32559 , H01J37/32871 , H01J37/3426 , H01J37/3441
Abstract: Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.
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