公开(公告)号：US20230167543A1

公开(公告)日：2023-06-01

申请号：US18101944

申请日：2023-01-26

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/56 ,  C23C16/513 ,  C23C16/44 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195

CPC classification number: C23C16/0281 ,  C23C16/405 ,  C23C16/56 ,  C23C16/513 ,  C23C16/4404 ,  C04B35/18 ,  C04B35/44 ,  C04B35/10 ,  C04B35/20 ,  C04B35/505 ,  C04B35/14 ,  C04B35/04 ,  C04B35/16 ,  C04B35/01 ,  C04B35/195 ,  Y10S156/914 ,  Y10T428/1317 ,  Y10T428/12743 ,  Y10T428/1259 ,  Y10T428/12667 ,  Y10T428/12764 ,  Y10T428/12604 ,  Y10T428/31504 ,  Y10T428/12736 ,  Y10T428/1266 ,  Y10T428/12597 ,  Y10T428/12611 ,  Y10T428/31678 ,  C04B2235/96

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US20200013589A1

公开(公告)日：2020-01-09

申请号：US16401871

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan BALARAMAN ,  Sathyanarayana BINDIGANAVALE ,  Rajasekhar PATIBANDLA ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR ,  Mats LARSSON ,  Kevin A. PAPKE ,  William M. LU

IPC: H01J37/32 ,  H01L21/687 ,  C23C14/16 ,  C23C14/06 ,  C23C16/06 ,  C23C16/34

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

公开(公告)号：US20240110284A1

公开(公告)日：2024-04-04

申请号：US18372792

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： Lulu XIONG ,  Kevin Hsiao ,  Chris LIU ,  Chieh-Wen LO ,  Sean M. SEUTTER ,  Deenesh PADHI ,  Prayudi LIANTO ,  Peng SUO ,  Guan Huei SEE ,  Zongbin WANG ,  Shengwei ZENG ,  Balamurugan RAMASAMY

IPC: C23C16/505 ,  C23C16/04 ,  C23C16/32 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/505 ,  C23C16/045 ,  C23C16/325 ,  C23C16/56 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/3321

Abstract: A method of processing a substrate is disclosed which includes depositing a layer in a processing chamber on a field region, a sidewall region, and a fill region of a feature of the substrate, wherein a hardness of a portion of the layer deposited on the sidewall region is lower than a hardness of a portion of the layer deposited on the field region, and lower than a hardness of a portion of the layer deposited on the fill region.

公开(公告)号：US20200270747A1

公开(公告)日：2020-08-27

申请号：US16791264

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC: C23C16/02 ,  C23C16/513 ,  C23C16/56 ,  C23C16/40

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US20200020511A1

公开(公告)日：2020-01-16

申请号：US16412109

申请日：2019-05-14

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Mats LARSSON ,  Kevin A. PAPKE ,  Rajasekhar PATIBANDLA ,  Sathyanarayana BINDIGANAVALE ,  Umesh M. KELKAR

IPC: H01J37/32 ,  C23C28/04

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.