公开(公告)号：US20210123139A1

公开(公告)日：2021-04-29

申请号：US16997389

申请日：2020-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Chunming ZHOU ,  Wenting HOU ,  Sree Rangasai KESAPRAGADA

IPC: C23C28/02 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  C23C16/01 ,  C23C16/06 ,  C23C14/16

Abstract: Methods for processing a substrate are provided herein. The method, for example, includes selectively depositing a first layer of metal within at least one feature on a substrate; depositing a second layer of metal atop the first layer of metal and at least on sidewalls defining the at least one feature; depositing a third layer of metal atop the second layer of metal and within the feature to at least completely fill the at least one feature; and removing some of the second layer of metal or some of the second layer of metal and some of the third layer of metal so that remaining portions of the second layer of metal and the third layer of metal are flush with a top surface of the at least one feature.

公开(公告)号：US20220415649A1

公开(公告)日：2022-12-29

申请号：US17902357

申请日：2022-09-02

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20210062325A1

公开(公告)日：2021-03-04

申请号：US17003969

申请日：2020-08-26

Applicant: Applied Materials, Inc.

Inventor： Jothilingam RAMALINGAM ,  Xiaozhou CHE ,  Yong CAO ,  Shane LAVAN ,  Chunming ZHOU

IPC: C23C14/35 ,  H01L21/02 ,  H01J37/32 ,  H01J37/34 ,  C23C14/06

Abstract: A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

公开(公告)号：US20200350160A1

公开(公告)日：2020-11-05

申请号：US16847455

申请日：2020-04-13

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20230335393A1

公开(公告)日：2023-10-19

申请号：US18337319

申请日：2023-06-19

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

CPC classification number: H01L21/02266 ,  H01L21/67745 ,  H01L21/67742

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20220336274A1

公开(公告)日：2022-10-20

申请号：US17857341

申请日：2022-07-05

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US20220130724A1

公开(公告)日：2022-04-28

申请号：US17082602

申请日：2020-10-28

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/02

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.