公开(公告)号：US20230115130A1

公开(公告)日：2023-04-13

申请号：US17500749

申请日：2021-10-13

Applicant: Applied Materials, Inc.

Inventor： Tom Ho Wing YU ,  Nobuyuki SASAKI

IPC: H01L21/285 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to methods for forming or otherwise producing metal silicides on a silicon surface of substrate. Exemplary metal silicides can be or include titanium silicide, cobalt silicide, nickel silicide, molybdenum silicide, or alloys thereof. In one or more embodiments, a method of forming a metal silicide is provided and includes removing a native oxide from a substrate to reveal a silicon surface of the substrate during a cleaning process, depositing a metallic layer on the silicon surface during a deposition process, and heating the substrate contained within a process region containing hydrogen gas during a silicidation process to produce a metal silicide layer on the substrate from the metallic layer and the silicon surface.

公开(公告)号：US20220336274A1

公开(公告)日：2022-10-20

申请号：US17857341

申请日：2022-07-05

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US20220130724A1

公开(公告)日：2022-04-28

申请号：US17082602

申请日：2020-10-28

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min HEON ,  Wei Min CHAN ,  Tom Ho Wing YU ,  Peiqi WANG ,  Ju Ik KANG ,  Feihu WANG ,  Nobuyuki SASAKI ,  Chunming ZHOU

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/02

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.