公开(公告)号：US20210123139A1

公开(公告)日：2021-04-29

申请号：US16997389

申请日：2020-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Chunming ZHOU ,  Wenting HOU ,  Sree Rangasai KESAPRAGADA

IPC: C23C28/02 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  C23C16/01 ,  C23C16/06 ,  C23C14/16

Abstract: Methods for processing a substrate are provided herein. The method, for example, includes selectively depositing a first layer of metal within at least one feature on a substrate; depositing a second layer of metal atop the first layer of metal and at least on sidewalls defining the at least one feature; depositing a third layer of metal atop the second layer of metal and within the feature to at least completely fill the at least one feature; and removing some of the second layer of metal or some of the second layer of metal and some of the third layer of metal so that remaining portions of the second layer of metal and the third layer of metal are flush with a top surface of the at least one feature.