公开(公告)号：US20200350160A1

公开(公告)日：2020-11-05

申请号：US16847455

申请日：2020-04-13

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20220415649A1

公开(公告)日：2022-12-29

申请号：US17902357

申请日：2022-09-02

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20220301828A1

公开(公告)日：2022-09-22

申请号：US17203786

申请日：2021-03-17

Applicant: Applied Materials, Inc.

Inventor： Wei DOU ,  Yong CAO ,  Mingdong LI ,  Shane LAVAN ,  Jothilingam RAMALINGAM ,  Chengyu LIU

IPC: H01J37/32 ,  C23C14/14 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54

Abstract: Embodiments of methods and apparatus for reducing particle formation in physical vapor deposition (PVD) chambers are provided herein. In some embodiments, a method of reducing particle formation in a PVD chamber includes: performing a plurality of first deposition processes on a corresponding series of substrates disposed on a substrate support in the PVD chamber, wherein the PVD chamber includes a cover ring disposed about the substrate support and having a texturized outer surface, and wherein a silicon nitride (SiN) layer having a first thickness is deposited onto the texturized outer surface during each of the plurality of first deposition processes; and performing a second deposition process on the cover ring between subsets of the plurality of first deposition processes to deposit an amorphous silicon layer having a second thickness onto an underlying silicon nitride (SiN) layer.

公开(公告)号：US20230187191A1

公开(公告)日：2023-06-15

申请号：US18109130

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Kirankumar Neelasandra SAVANDAIAH ,  Shane LAVAN ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Randal Dean SCHMIEDING ,  Yong CAO

IPC: H01J37/34 ,  C23C14/28 ,  C23C14/56 ,  H01J37/32 ,  C23C14/35

CPC classification number: H01J37/3441 ,  C23C14/28 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3411 ,  H01J37/3447 ,  H01J37/3488 ,  H01J37/32504

Abstract: Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

公开(公告)号：US20210062325A1

公开(公告)日：2021-03-04

申请号：US17003969

申请日：2020-08-26

Applicant: Applied Materials, Inc.

Inventor： Jothilingam RAMALINGAM ,  Xiaozhou CHE ,  Yong CAO ,  Shane LAVAN ,  Chunming ZHOU

IPC: C23C14/35 ,  H01L21/02 ,  H01J37/32 ,  H01J37/34 ,  C23C14/06

Abstract: A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

公开(公告)号：US20230335393A1

公开(公告)日：2023-10-19

申请号：US18337319

申请日：2023-06-19

Applicant: Applied Materials, Inc.

Inventor： Chunming ZHOU ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Kevin Vincent MORAES ,  Shane LAVAN

IPC: H01L21/02 ,  H01L21/677

CPC classification number: H01L21/02266 ,  H01L21/67745 ,  H01L21/67742

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

公开(公告)号：US20220186361A1

公开(公告)日：2022-06-16

申请号：US17121603

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Kirankumar Neelasandra SAVANDAIAH ,  Shane LAVAN ,  Sundarapandian Ramalinga Vijayalakshmi REDDY ,  Randal Dean SCHMIEDING ,  Yong CAO

IPC: C23C14/56 ,  C23C14/28

Abstract: Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.