公开(公告)号：US08867177B2

公开(公告)日：2014-10-21

申请号：US12914926

申请日：2010-10-28

申请人： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

发明人： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

IPC分类号： G11B5/33 ,  G11B5/39 ,  G11B5/31 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/60

CPC分类号： G11B5/607 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3906 ,  G11B5/3967

摘要： A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.

摘要翻译： 磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。 由于改进了固定层钉扎，提高了热稳定性。 读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。 读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。 第一层包括Fe含量高于20-30原子％的Co-Fe层。 钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层 和在Co-Fe-B层上形成的第二层Co-Fe层。

公开(公告)号：US08830734B2

公开(公告)日：2014-09-09

申请号：US12950673

申请日：2010-11-19

申请人： Andreas Karl Roelofs ,  Haiwen Xi

发明人： Andreas Karl Roelofs ,  Haiwen Xi

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/16

摘要： Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state.

摘要翻译： 将数据写入磁存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。 根据各种实施例，通过所选择的磁存储器单元施加写入电流，以将所选择的单元的磁性进动启动到期望的磁状态。 场辅助电流同时流过相邻的存储单元，以产生有助于所选择的单元进入所需磁状态的磁场。

公开(公告)号：US08416619B2

公开(公告)日：2013-04-09

申请号：US13089538

申请日：2011-04-19

申请人： Yuankai Zheng ,  Haiwen Xi ,  Dimitar V. Dimitrov ,  Dexin Wang

发明人： Yuankai Zheng ,  Haiwen Xi ,  Dimitar V. Dimitrov ,  Dexin Wang

IPC分类号： G11C11/14

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.

摘要翻译： 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声​​子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。

公开(公告)号：US08287944B2

公开(公告)日：2012-10-16

申请号：US13073195

申请日：2011-03-28

申请人： Kaizhong Gao ,  Haiwen Xi

发明人： Kaizhong Gao ,  Haiwen Xi

IPC分类号： H01L43/12

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

摘要翻译： 具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。 自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。 该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向超出叠层膜的面外磁性存储单元 平面，例如垂直于堆叠平面。

公开(公告)号：US20120257446A1

公开(公告)日：2012-10-11

申请号：US13527839

申请日：2012-06-20

申请人： Xiaohua Lou ,  Haiwen Xi

发明人： Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  Y10S977/933 ,  Y10S977/935

摘要： A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

摘要翻译： 存储单元包括电耦合到位线和字线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使单极电压跨过磁隧道结数据单元而在高电阻状态和低电阻状态之间切换。 二极管电耦合在磁性隧道结数据单元和字线或位线之间。 电压源提供写入高电阻状态和低电阻状态的磁性隧道结数据单元两端的单极电压。

公开(公告)号：US08243503B2

公开(公告)日：2012-08-14

申请号：US12958106

申请日：2010-12-01

申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

摘要翻译： 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。

公开(公告)号：US20120127785A1

公开(公告)日：2012-05-24

申请号：US12950673

申请日：2010-11-19

申请人： Andreas Karl Roelofs ,  Haiwen Xi

发明人： Andreas Karl Roelofs ,  Haiwen Xi

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/16

摘要： Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state.

摘要翻译： 将数据写入磁存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。 根据各种实施例，通过所选择的磁存储器单元施加写入电流，以将所选择的单元的磁性进动启动到期望的磁状态。 场辅助电流同时流过相邻的存储单元，以产生有助于所选择的单元进入所需磁状态的磁场。

公开(公告)号：US20120087175A1

公开(公告)日：2012-04-12

申请号：US13333598

申请日：2011-12-21

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US08098541B2

公开(公告)日：2012-01-17

申请号：US13084774

申请日：2011-04-12

申请人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

发明人： Dimitar Dimitrov ,  Olle Gunnar Heinonen ,  Dexin Wang ,  Haiwen Xi

IPC分类号： G11C8/00

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08

摘要： A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

摘要翻译： 一种在非易失性存储单元中的杂散磁场补偿的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）。 在一些实施例中，第一隧道势垒耦合到具有垂直各向异性和第一磁化方向的参考结构。 具有垂直各向异性的记录结构耦合到第一隧道势垒和非磁性间隔层。 具有与第一磁化方向基本相对的垂直各向异性和第二磁化方向的补偿层耦合到非磁性间隔层。 此外，通过向记录结构施加电流，可将存储单元编程为选定的电阻状态。

公开(公告)号：US08059450B2

公开(公告)日：2011-11-15

申请号：US12899646

申请日：2010-10-07

申请人： Haiwen Xi ,  Song S. Xue

发明人： Haiwen Xi ,  Song S. Xue

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C11/5664 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0064 ,  G11C2013/0073 ,  G11C2211/5621 ,  G11C2213/31 ,  G11C2213/32

摘要： Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state. Then the method includes applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value. This step is repeated until the high resistance state resistance value is greater than the lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value. The reverse resetting voltage pulse has a second polarity being opposite the first polarity. This step is repeated until all the high resistance state resistance value is less than the upper resistance limit value.

摘要翻译： 提供了电阻随机存取存储器（RRAM）的写验证方法。 所述方法包括在RRAM单元之间施加复位操作电压脉冲，以将RRAM单元的电阻从低电阻状态改变为高电阻状态。 然后，该方法包括如果RRAM单元具有小于所选择的较低电阻极限值的高电阻状态电阻值，则在RRAM单元之间施加正向复位电压脉冲。 重复该步骤直到高电阻状态电阻值大于下限电阻值。 该方法还包括如果RRAM单元具有大于所选上限电阻值的高电阻状态电阻值，则跨越RRAM单元施加反向复位电压脉冲。 反向复位电压脉冲具有与第一极性相反的第二极性。 重复该步骤，直到所有高电阻状态电阻值小于上限电阻值。