公开(公告)号：US09129690B2

公开(公告)日：2015-09-08

申请号：US13553965

申请日：2012-07-20

Applicant: Chang-Man Park ,  Dustin William Erickson ,  Mohamad Towfik Krounbi

Inventor： Chang-Man Park ,  Dustin William Erickson ,  Mohamad Towfik Krounbi

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11C11/161 ,  H01L43/08 ,  H01L43/12

Abstract: A method and apparatus provide a magnetic memory including magnetic junctions on a substrate. The apparatus include an RIE chamber and an ion milling chamber. The chambers are coupled such that the magnetic memory is movable between the chambers without exposing the magnetic memory to ambient. The method provides magnetic junction layers and a hard mask layer on the magnetic junction layers. A hard mask is formed from the hard mask layer using an RIE. The magnetic junction layers are ion milled after the RIE and without exposing the magnetic memory to an ambient after the RIE. The ion milling defines at least part of each magnetic junction. A magnetic junction may be provided. The magnetic junction includes pinned, nonmagnetic spacer, and free layers. The free layer has a width of not more than twenty nanometers and is switchable when a write current is passed through the magnetic junction.

Abstract translation: 一种方法和装置提供包括在基底上的磁结的磁存储器。 该装置包括RIE室和离子研磨室。 这些室被耦合，使得磁存储器可以在室之间移动，而不将磁存储器暴露于环境。 该方法在磁结层上提供磁结层和硬掩模层。 使用RIE从硬掩模层形成硬掩模。 在RIE之后，磁结层被离子研磨，并且在RIE之后没有将磁存储器暴露在环境中。 离子铣削限定了每个磁结的至少一部分。 可以提供磁结。 磁结包括固定的，非磁性的隔离层和自由层。 自由层具有不超过二十纳米的宽度，并且当写入电流通过磁性结时可自由切换。

公开(公告)号：US08296930B2

公开(公告)日：2012-10-30

申请号：US12645323

申请日：2009-12-22

Applicant: Shin Funada ,  Quang Le ,  Thomas L. Leong ,  Jui-Lung Li ,  Chang-Man Park ,  Ning Shi ,  Hicham M. Sougrati

Inventor： Shin Funada ,  Quang Le ,  Thomas L. Leong ,  Jui-Lung Li ,  Chang-Man Park ,  Ning Shi ,  Hicham M. Sougrati

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3163 ,  G11B5/112 ,  G11B5/3912 ,  G11B5/398 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

Abstract: A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.

Abstract translation: 一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。 该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。 执行离子铣削来定义传感器。 然后沉积薄的绝缘层和磁性硬偏置层。 进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。 因为CMP停止层非常致密且硬，所以可以使其非常薄。 这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

公开(公告)号：US20090035462A1

公开(公告)日：2009-02-05

申请号：US11832318

申请日：2007-08-01

Applicant: Chang Man Park

Inventor： Chang Man Park

IPC: C23C16/00 ,  C23C16/54

CPC classification number: C23C14/564 ,  C23C14/081 ,  C23C14/16 ,  C23C16/4404

Abstract: A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.

Abstract translation: 一种用于在沉积室中进行粘贴的方法和装置。 该方法包括通过溅射Ti靶在至少沉积室的内部上沉积Ti粘贴层，从而减少沉积室中的污染物以便随后的沉积。 该方法还包括在至少沉积室的内部部分上沉积Ti粘贴层之后，在沉积室内的晶片上沉积第二层。 第二层包括MgO和Mg中的至少一种。

公开(公告)号：US07417832B1

公开(公告)日：2008-08-26

申请号：US11114255

申请日：2005-04-26

Applicant: Dustin W. Erickson ,  Chang-Man Park ,  Shin Funada ,  Lena Miloslavsky

Inventor： Dustin W. Erickson ,  Chang-Man Park ,  Shin Funada ,  Lena Miloslavsky

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/32 ,  H01F41/325 ,  H01L43/08

Abstract: A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a filter layer, a specular layer, a barrier layer, and a capping layer. The nonmagnetic spacer layer resides between the pinned layer and the free layer. The free layer is electrically conductive and resides between the filter layer and the nonmagnetic spacer layer. The specular layer includes a first material and is electrically insulating. The barrier layer resides between the specular oxide layer and the capping layer. The barrier layer is nonmagnetic and includes a second material different material from the first material. The capping layer includes a third material different from the second material.

Abstract translation: 公开了一种用于提供磁阻结构的方法和系统。 磁阻结构包括钉扎层，非磁性间隔层，自由层，过滤层，镜面层，阻挡层和覆盖层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层是导电的并且位于过滤层和非磁性间隔层之间。 镜面层包括第一材料并且是电绝缘的。 阻挡层位于镜面氧化物层和覆盖层之间。 阻挡层是非磁性的并且包括与第一材料不同的材料的第二材料。 封盖层包括与第二材料不同的第三材料。

公开(公告)号：US07170725B1

公开(公告)日：2007-01-30

申请号：US10932671

申请日：2004-09-01

Applicant: Min Zhou ,  Chang-Man Park

Inventor： Min Zhou ,  Chang-Man Park

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996

Abstract: A magnetic sensor is disclosed that is disposed between top and bottom magnetic shield layers, the sensor comprising: a nonferromagnetic layer disposed beneath the top shield layer; a magnetically soft layer disposed beneath the nonferromagnetic layer, the magnetically soft layer having a magnetization that rotates in response to an applied magnetic field; a ferromagnetic pinned layer disposed beneath the magnetically soft layer; an antiferromagnetic layer disposed beneath the ferromagnetic layer; and an aluminum-nitride seed layer disposed between the antiferromagnetic layer and the bottom shield layer. The aluminum-nitride seed layer decreases sense current shunting, increases pinning strength, increases magnetoresistance and/or increases yield.

Abstract translation: 公开了一种磁传感器，其设置在顶部和底部磁屏蔽层之间，该传感器包括：设置在顶部屏蔽层下方的非铁磁层; 设置在所述非铁磁层下方的磁软层，所述磁软层具有响应于所施加的磁场而旋转的磁化; 设置在磁软层下方的铁磁性钉扎层; 设置在铁磁层下方的反铁磁层; 以及设置在反铁磁性层和底部屏蔽层之间的氮化铝种子层。 氮化铝种子层减少感测电流分流，增加钉扎强度，增加磁阻和/或增加产量。

公开(公告)号：US5221800A

公开(公告)日：1993-06-22

申请号：US875993

申请日：1992-04-29

Applicant: Chang-Man Park ,  Nancy S. Goroff

Inventor： Chang-Man Park ,  Nancy S. Goroff

IPC: C07C51/31

CPC classification number: C07C51/313

Abstract: A process for the manufacture of adipic acid is disclosed. In this process, cyclohexane is oxidized in an aliphatic monobasic acid solvent in the presence of a soluble cobalt salt wherein water is continuously or intermittently added to the reaction system after the initiation of oxidation of cyclohexane as indicated by a suitable means of detection, and wherein the reaction is conducted at a temperature of about 50.degree. C. to about 150.degree. C. at an oxygen partial pressure of about 50 to about 420 pounds per square inch absolute.

Abstract translation: 公开了一种制备己二酸的方法。 在该方法中，环己烷在脂溶性一元酸溶剂中在可溶性钴盐存在下被氧化，其中如适当的检测方法所示，环己烷开始氧化后连续地或间歇地加入水中的反应体系中， 反应在大约50℃至大约150℃的温度下进行，氧分压为约50至约420磅/平方英寸绝对值。

公开(公告)号：US5124461A

公开(公告)日：1992-06-23

申请号：US740606

申请日：1991-08-05

Applicant: Chang-Man Park

Inventor： Chang-Man Park

IPC: C07C51/573 ,  C08G63/20 ,  C08G73/16

CPC classification number: C08G73/16 ,  C07C51/573 ,  C08G63/20

Abstract: A process for the production of trimellitic anhydride with improved color is disclosed. The process comprises heat treating trimellitic anhydride in the presence of oxides of boron or hydrated oxides of boron followed by fractionation. Trimellitic anhydride is used in the manufacture of polyesters and polyamide-imides.

Abstract translation: 公开了一种生产具有改进颜色的偏苯三酸酐的方法。 该方法包括在硼的氧化物或硼的水合氧化物存在下热分解偏苯三酸酐，然后分馏。 偏苯三酸酐用于制造聚酯和聚酰胺 - 酰亚胺。

公开(公告)号：US09398798B2

公开(公告)日：2016-07-26

申请号：US14404185

申请日：2013-04-23

Applicant: Sung Won Yi ,  Chang Man Park ,  Jun Oh Kim ,  Chan Ki Lee ,  Young Jin Lee ,  Jin Gug Kim

Inventor： Sung Won Yi ,  Chang Man Park ,  Jun Oh Kim ,  Chan Ki Lee ,  Young Jin Lee ,  Jin Gug Kim

IPC: A45D29/00

CPC classification number: A45D29/00 ,  A45D2029/005

Abstract: The nail art device having a control unit; a holder; a display panel that displays a predetermined selected pattern through the control of the control unit; and a UV irradiation unit that irradiates the display panel with UV rays is provided. When a finger, to the nail of which polish having a UV-reactive component has been applied, is placed in the holder, the polish applied to the nail reacts with the UV rays which are transmitted through the display panel where the selected pattern is displayed to form a nail pattern.

Abstract translation: 具有控制单元的美甲装置; 持有人 显示面板，其通过控制单元的控制显示预定的选定图案; 并且提供了用紫外线照射显示面板的UV照射单元。 当已经施加了具有UV反应性成分的抛光剂的手指被放置在保持器中时，施加到指甲上的抛光剂与通过显示面板传输的紫外线反应，其中所选择的图案被显示 形成指甲图案。

公开(公告)号：US20140022839A1

公开(公告)日：2014-01-23

申请号：US13553965

申请日：2012-07-20

Applicant: Chang-Man Park ,  Dustin William Erickson ,  Mohamad Towfik Krounbi

Inventor： Chang-Man Park ,  Dustin William Erickson ,  Mohamad Towfik Krounbi

IPC: G11C11/14 ,  C23F1/00

CPC classification number: G11C11/161 ,  H01L43/08 ,  H01L43/12

Abstract: A method and apparatus provide a magnetic memory including magnetic junctions on a substrate. The apparatus include an RIE chamber and an ion milling chamber. The chambers are coupled such that the magnetic memory is movable between the chambers without exposing the magnetic memory to ambient. The method provides magnetic junction layers and a hard mask layer on the magnetic junction layers. A hard mask is formed from the hard mask layer using an RIE. The magnetic junction layers are ion milled after the RIE and without exposing the magnetic memory to an ambient after the RIE. The ion milling defines at least part of each magnetic junction. A magnetic junction may be provided. The magnetic junction includes pinned, nonmagnetic spacer, and free layers. The free layer has a width of not more than twenty nanometers and is switchable when a write current is passed through the magnetic junction.

Abstract translation: 一种方法和装置提供包括在基底上的磁结的磁存储器。 该装置包括RIE室和离子研磨室。 这些室被耦合，使得磁存储器可以在室之间移动，而不将磁存储器暴露于环境。 该方法在磁结层上提供磁结层和硬掩模层。 使用RIE从硬掩模层形成硬掩模。 在RIE之后，磁结层被离子研磨，并且在RIE之后没有将磁存储器暴露在环境中。 离子铣削限定了每个磁结的至少一部分。 可以提供磁结。 磁结包括固定的，非磁性的隔离层和自由层。 自由层具有不超过二十纳米的宽度，并且当写入电流通过磁性结时可自由切换。

公开(公告)号：US08333898B2

公开(公告)日：2012-12-18

申请号：US12973791

申请日：2010-12-20

Applicant: Diane L. Brown ,  Quang Le ,  Chang-Man Park ,  David J. Seagle ,  Eileen Yan

Inventor： Diane L. Brown ,  Quang Le ,  Chang-Man Park ,  David J. Seagle ,  Eileen Yan

IPC: B44C1/22

CPC classification number: G11B5/00826 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3977

Abstract: A method for manufacturing a magnetic tape head having a data sensor and a servo sensor. The data sensor and servo sensor are each separated from first and second magnetic shields by a non-magnetic gap layer, and the gap thickness for the servo sensor is larger than the gap thickness for the data sensor. The method involves depositing a first gap layer over shield structures, then depositing a second gap layer using a liftoff process to remove the second gap layer over the data sensor region. A plurality of sensor layers are then deposited, and a stripe height defining mask structure is formed over the data and servo sensor regions, the mask having a back edge that is configured to define a stripe height of the data and servo sensors. An ion milling is then performed to define the stripe height and to remove gap material from the field.

Abstract translation: 一种具有数据传感器和伺服传感器的磁带头的制造方法。 数据传感器和伺服传感器通过非磁隙层与第一和第二磁屏蔽分开，伺服传感器的间隙厚度大于数据传感器的间隙厚度。 该方法包括在屏蔽结构上沉积第一间隙层，然后使用提升过程沉积第二间隙层以去除数据传感器区域上的第二间隙层。 然后沉积多个传感器层，并且在数据和伺服传感器区域上形成条纹高度限定掩模结构，掩模具有配置为限定数据和伺服传感器的条带高度的后边缘。 然后进行离子铣削以限定条带高度并从场中移除间隙材料。