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    REPEATABILITY FOR RF MGO TMR BARRIER LAYER PROCESS BY IMPLEMENTING TI PASTING
    1.
    发明申请
    REPEATABILITY FOR RF MGO TMR BARRIER LAYER PROCESS BY IMPLEMENTING TI PASTING 失效
    通过实施TI PASTING对RF MGO TMR BARRIER层工艺的可重复性

    公开(公告)号：US20090035462A1

    公开(公告)日：2009-02-05

    申请号：US11832318

    申请日：2007-08-01

    Applicant: Chang Man Park

    Inventor： Chang Man Park

    IPC: C23C16/00 ,  C23C16/54

    CPC classification number: C23C14/564 ,  C23C14/081 ,  C23C14/16 ,  C23C16/4404

    Abstract: A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.

    Abstract translation: 一种用于在沉积室中进行粘贴的方法和装置。 该方法包括通过溅射Ti靶在至少沉积室的内部上沉积Ti粘贴层，从而减少沉积室中的污染物以便随后的沉积。 该方法还包括在至少沉积室的内部部分上沉积Ti粘贴层之后，在沉积室内的晶片上沉积第二层。 第二层包括MgO和Mg中的至少一种。

    Magnetic sensor having improved resistance to thermal stress induced instability
    2.
    发明授权
    Magnetic sensor having improved resistance to thermal stress induced instability 有权
    具有改善的耐热应力诱发不稳定性的磁传感器

    公开(公告)号：US08867177B2

    公开(公告)日：2014-10-21

    申请号：US12914926

    申请日：2010-10-28

    Applicant: Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

    Inventor： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

    IPC: G11B5/33 ,  G11B5/39 ,  G11B5/31 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/60

    CPC classification number: G11B5/607 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3906 ,  G11B5/3967

    Abstract: A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.

    Abstract translation: 磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。 由于改进了固定层钉扎，提高了热稳定性。 读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。 读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。 第一层包括Fe含量高于20-30原子％的Co-Fe层。 钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层 和在Co-Fe-B层上形成的第二层Co-Fe层。

    Nail art device, system, and method using UV light
    6.
    发明授权
    Nail art device, system, and method using UV light 有权
    指甲艺术装置，系统和使用紫外线的方法

    公开(公告)号：US09398798B2

    公开(公告)日：2016-07-26

    申请号：US14404185

    申请日：2013-04-23

    Applicant: Sung Won Yi ,  Chang Man Park ,  Jun Oh Kim ,  Chan Ki Lee ,  Young Jin Lee ,  Jin Gug Kim

    Inventor： Sung Won Yi ,  Chang Man Park ,  Jun Oh Kim ,  Chan Ki Lee ,  Young Jin Lee ,  Jin Gug Kim

    IPC: A45D29/00

    CPC classification number: A45D29/00 ,  A45D2029/005

    Abstract: The nail art device having a control unit; a holder; a display panel that displays a predetermined selected pattern through the control of the control unit; and a UV irradiation unit that irradiates the display panel with UV rays is provided. When a finger, to the nail of which polish having a UV-reactive component has been applied, is placed in the holder, the polish applied to the nail reacts with the UV rays which are transmitted through the display panel where the selected pattern is displayed to form a nail pattern.

    Abstract translation: 具有控制单元的美甲装置; 持有人 显示面板，其通过控制单元的控制显示预定的选定图案; 并且提供了用紫外线照射显示面板的UV照射单元。 当已经施加了具有UV反应性成分的抛光剂的手指被放置在保持器中时，施加到指甲上的抛光剂与通过显示面板传输的紫外线反应，其中所选择的图案被显示 形成指甲图案。

    Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting
    9.
    发明授权
    Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting 失效
    通过实施Ti粘贴，RF MgO TMR势垒层工艺的重复性

    公开(公告)号：US08679301B2

    公开(公告)日：2014-03-25

    申请号：US11832318

    申请日：2007-08-01

    Applicant: Chang Man Park

    Inventor： Chang Man Park

    IPC: C23C14/34

    CPC classification number: C23C14/564 ,  C23C14/081 ,  C23C14/16 ,  C23C16/4404

    Abstract: A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.

    Abstract translation: 一种用于在沉积室中进行粘贴的方法和装置。 该方法包括通过溅射Ti靶在至少沉积室的内部上沉积Ti粘贴层，从而减少沉积室中的污染物以便随后的沉积。 该方法还包括在至少沉积室的内部部分上沉积Ti粘贴层之后，在沉积室内的晶片上沉积第二层。 第二层包括MgO和Mg中的至少一种。

    MAGNETIC SENSOR HAVING IMPROVED RESISTANCE TO THERMAL STRESS INDUCED INSTABILITY
    10.
    发明申请
    MAGNETIC SENSOR HAVING IMPROVED RESISTANCE TO THERMAL STRESS INDUCED INSTABILITY 有权
    具有改善耐热应力诱发不稳定性的磁传感器

    公开(公告)号：US20120106006A1

    公开(公告)日：2012-05-03

    申请号：US12914926

    申请日：2010-10-28

    Applicant: Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

    Inventor： Satoru Araki ,  Hardayal S. Gill ,  Hiroaki Chihaya ,  Dustin W. Erickson ,  Haiwen Xi ,  Chang Man Park

    IPC: G11B5/48 ,  G11B5/187

    CPC classification number: G11B5/607 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3906 ,  G11B5/3967

    Abstract: A magnetic read sensor having improved robustness to withstand thermal variations resulting from thermal fly height heating. Improved thermal robustness comes as a result of improved pinned layer pinning. The read head includes an AFM layer having an increased thickness to provide a higher blocking temperature. The read head further includes a pinned layer structure that includes a first magnetic layer adjacent to and exchange coupled with the AFM layer. The first layer comprises a Co—Fe layer with an increased Fe content of 20-30 atomic percent. The pinned layer structure also includes a second magnetic layer that is antiparallel coupled with the AP1 layer. The AP2 layer can be a multi-layer structure that includes a layer of CoFe, a layer of Co—Fe—Hf formed on the layer of Co—Fe, a layer of Co—Fe—B formed on the layer of Co—Fe—Hf, and a second layer of Co—Fe formed on the layer of Co—Fe—B.

    Abstract translation: 磁读取传感器具有改进的鲁棒性，以承受由热飞高高度加热引起的热变化。 由于改进了固定层钉扎，提高了热稳定性。 读头包括具有增加的厚度以提供更高的阻挡温度的AFM层。 读取头还包括钉扎层结构，其包括与AFM层相邻并与AFM层交换耦合的第一磁性层。 第一层包括Fe含量高于20-30原子％的Co-Fe层。 钉扎层结构还包括与AP1层反平行耦合的第二磁性层。 AP2层可以是多层结构，其包括CoFe层，Co-Fe层上形成的Co-Fe-Hf层，Co-Fe层上形成的Co-Fe-B层 和在Co-Fe-B层上形成的第二层Co-Fe层。

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