Invention Grant
US08679301B2 Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting
失效
通过实施Ti粘贴，RF MgO TMR势垒层工艺的重复性
- Patent Title: Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting
- Patent Title (中): 通过实施Ti粘贴，RF MgO TMR势垒层工艺的重复性
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Application No.: US11832318Application Date: 2007-08-01
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Publication No.: US08679301B2Publication Date: 2014-03-25
- Inventor: Chang Man Park
- Applicant: Chang Man Park
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C14/34
- IPC: C23C14/34
Abstract:
A method and apparatus for performing pasting in a deposition chamber. The method includes depositing a Ti pasting layer on at least the interior portion of the deposition chamber by sputtering a Ti target, thereby reducing contaminants in the deposition chamber for subsequent depositions. The method also includes, after depositing the Ti pasting layer on at least the interior portion of the deposition chamber, depositing a second layer on a wafer within the deposition chamber. The second layer comprises at least one of MgO and Mg.
Public/Granted literature
- US20090035462A1 REPEATABILITY FOR RF MGO TMR BARRIER LAYER PROCESS BY IMPLEMENTING TI PASTING Public/Granted day:2009-02-05
Information query
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