Invention Grant
- Patent Title: Magnetoresistive sensor with novel pinned layer structure
- Patent Title (中): 具有新型钉扎层结构的磁阻传感器
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Application No.: US12345733Application Date: 2008-12-30
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Publication No.: US08107202B2Publication Date: 2012-01-31
- Inventor: Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
- Applicant: Wen-yaung Lee , Chang Man Park , Brian R. York , Alexander M. Zeltser
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
Public/Granted literature
- US20090257152A1 MAGNETORESISTIVE SENSOR WITH HIGH TMR AND LOW RA Public/Granted day:2009-10-15
Information query
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