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公开(公告)号：CN105280602A
公开(公告)日：2016-01-27
申请号：CN201510364702.2
申请日：2015-06-26
Applicant: 瑞萨电子株式会社
IPC: H01L23/498
CPC classification number: H01L23/49568 , H01L22/32 , H01L23/3128 , H01L23/4951 , H01L23/4952 , H01L23/49558 , H01L23/49811 , H01L23/544 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/45 , H01L24/81 , H01L24/97 , H01L25/0657 , H01L2223/5442 , H01L2223/54426 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0392 , H01L2224/0401 , H01L2224/05022 , H01L2224/05166 , H01L2224/05572 , H01L2224/05583 , H01L2224/05624 , H01L2224/05666 , H01L2224/06153 , H01L2224/06155 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/13027 , H01L2224/1308 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16105 , H01L2224/16225 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8113 , H01L2224/81191 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06565 , H01L2924/00011 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2224/81 , H01L2224/83 , H01L2224/32245 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01074 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2224/45147
Abstract: 本发明提高半导体装置的可靠性。在由保护绝缘膜(PIF)覆盖的焊盘(PD)的探针区域(PBR)形成有探针痕迹(PM)。并且，柱状电极(PE)具有：形成在开口区域(OP2)上的第1部分；和从开口区域(OP2)上向探针区域(PBR)上延伸的第2部分。此时，开口区域(OP2)的中心位置相对于与接合指形部相对的柱状电极(PE)的中心位置偏离。
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公开(公告)号：CN104733424A
公开(公告)日：2015-06-24
申请号：CN201410817762.0
申请日：2014-12-24
Applicant: 瑞萨电子株式会社
IPC: H01L23/498 , H01L21/60
CPC classification number: H01L25/0657 , H01L21/78 , H01L23/3135 , H01L23/49827 , H01L23/49838 , H01L23/49894 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2224/13017 , H01L2224/13025 , H01L2224/13082 , H01L2224/13084 , H01L2224/13111 , H01L2224/13147 , H01L2224/1601 , H01L2224/16058 , H01L2224/1607 , H01L2224/16145 , H01L2224/16146 , H01L2224/16238 , H01L2224/165 , H01L2224/16505 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/75252 , H01L2224/81075 , H01L2224/81191 , H01L2224/81815 , H01L2224/8183 , H01L2224/81986 , H01L2224/83192 , H01L2224/83862 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/014 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/20106 , H01L2924/2064 , H01L2924/00012 , H01L2224/16225 , H01L2924/00 , H01L2924/00014 , H01L2924/01029 , H01L2924/013
Abstract: 本发明涉及半导体器件及其制造方法。为了提高半导体器件的可靠性。在电耦合Cu柱形电极和引线的导电材料中，包括锡和铜的合金的合金部件形成在这个导电材料内部。此时，合金部件接触Cu柱形电极和引线二者，并且Cu柱形电极和引线通过合金部件相接。类似地，另外，在图8中，发现Cu柱形电极和引线通过合金部件彼此电耦合。由此，可以提高Cu柱形电极和引线之间的电耦合可靠性。
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公开(公告)号：CN104321866A
公开(公告)日：2015-01-28
申请号：CN201280073539.9
申请日：2012-09-14
Applicant: 瑞萨电子株式会社
IPC: H01L25/065 , H01L21/60 , H01L25/07 , H01L25/18
CPC classification number: H01L25/065 , H01L21/561 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L23/295 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/03 , H01L25/0657 , H01L25/07 , H01L25/18 , H01L25/50 , H01L2221/68327 , H01L2221/68331 , H01L2224/03002 , H01L2224/0401 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/16238 , H01L2224/27312 , H01L2224/27334 , H01L2224/29006 , H01L2224/29007 , H01L2224/29012 , H01L2224/29015 , H01L2224/2919 , H01L2224/32013 , H01L2224/32014 , H01L2224/32058 , H01L2224/32059 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/73204 , H01L2224/753 , H01L2224/75315 , H01L2224/81001 , H01L2224/81191 , H01L2224/81203 , H01L2224/81447 , H01L2224/81815 , H01L2224/81907 , H01L2224/83001 , H01L2224/83192 , H01L2224/83203 , H01L2224/8321 , H01L2224/83862 , H01L2224/83906 , H01L2224/83907 , H01L2224/92 , H01L2224/9211 , H01L2224/92242 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/06568 , H01L2924/07802 , H01L2924/07811 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2224/11 , H01L21/304 , H01L2224/03 , H01L21/78 , H01L2221/68381 , H01L21/4825 , H01L2224/27 , H01L2924/01047
Abstract: 一种半导体器件的制造方法，在布线衬底上，通过粘接材料分别层叠俯视时的平面尺寸不同的第一半导体芯片和第二半导体芯片，其中，在平面尺寸相对小的第一半导体芯片上搭载平面尺寸相对大的第二半导体芯片。另外，搭载了第一及第二半导体芯片之后，用树脂封固第一及第二半导体芯片。这里，第二半导体芯片和布线衬底的间隙用树脂封固之前，预先通过搭载第一及第二半导体芯片时使用的粘接材料填塞。
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公开(公告)号：CN205050835U
公开(公告)日：2016-02-24
申请号：CN201520449677.3
申请日：2015-06-26
Applicant: 瑞萨电子株式会社
IPC: H01L23/498
CPC classification number: H01L23/49568 , H01L22/32 , H01L23/3128 , H01L23/4951 , H01L23/4952 , H01L23/49558 , H01L23/49811 , H01L23/544 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/45 , H01L24/81 , H01L24/97 , H01L25/0657 , H01L2223/5442 , H01L2223/54426 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0392 , H01L2224/0401 , H01L2224/05022 , H01L2224/05166 , H01L2224/05572 , H01L2224/05583 , H01L2224/05624 , H01L2224/05666 , H01L2224/06153 , H01L2224/06155 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/13027 , H01L2224/1308 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16105 , H01L2224/16225 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8113 , H01L2224/81191 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06565 , H01L2924/00011 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2224/81 , H01L2224/83 , H01L2224/32245 , H01L2924/00012 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01074 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2224/45147
Abstract: 本实用新型提高半导体装置的可靠性。在由保护绝缘膜(PIF)覆盖的焊盘(PD)的探针区域(PBR)形成有探针痕迹(PM)。并且，柱状电极(PE)具有：形成在开口区域(OP2)上的第1部分；和从开口区域(OP2)上向探针区域(PBR)上延伸的第2部分。此时，开口区域(OP2)的中心位置相对于与接合指形部相对的柱状电极(PE)的中心位置偏离。
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