公开(公告)号：US20240371708A1

公开(公告)日：2024-11-07

申请号：US18770582

申请日：2024-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsiang CHAO ,  Chi-Ping LEI

IPC: H01L21/66 ,  B24B37/005 ,  B24B37/30 ,  H01L21/306

Abstract: A method and system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

公开(公告)号：US12076877B2

公开(公告)日：2024-09-03

申请号：US16884888

申请日：2020-05-27

Applicant: Applied Materials, Inc.

Inventor： Bum Jick Kim ,  Danielle Loi ,  Jay Gurusamy ,  Steven M. Zuniga

IPC: B26D3/00 ,  B23B1/00 ,  B24B37/10 ,  B24B37/11 ,  B24B37/30 ,  B24B41/04 ,  B24D3/00 ,  B26D1/02

CPC classification number: B26D3/006 ,  B23B1/00 ,  B24B37/10 ,  B24B37/11 ,  B24B37/30 ,  B24B41/04 ,  B24D3/00 ,  B26D1/02

Abstract: Embodiments of the present disclosure generally relate to methods of manufacturing polishing platens for use on a chemical mechanical polishing (CMP) system and polishing platens formed therefrom. A method of manufacturing a polishing includes positioning a polishing platen on a support of a manufacturing system. The manufacturing system includes the support and a cutting tool facing there towards. Here, the polishing platen includes a cylindrical metal body having a polymer layer disposed on a surface thereof and the polymer layer has a thickness of about 100 μm or more. The method further includes removing at least a portion of the polymer layer using the cutting tool to form a polishing pad-mounting surface. Beneficially, the method may be used to form a pad-mounting surface having a desired flatness or shape, such as a concave or convex shape.

公开(公告)号：US20240286242A1

公开(公告)日：2024-08-29

申请号：US18652248

申请日：2024-05-01

Applicant: Bruker Nano Inc.

Inventor： Vladimir Gulkov ,  Nikolay Yeremin

IPC: B24B37/013 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B49/00 ,  B24B49/10

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B37/046 ,  B24B37/107 ,  B24B37/30 ,  B24B49/006 ,  B24B49/10

Abstract: Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

公开(公告)号：US12068189B2

公开(公告)日：2024-08-20

申请号：US17371518

申请日：2021-07-09

Applicant: EBARA CORPORATION

Inventor： Satoru Yamaki ,  Makoto Fukushima ,  Keisuke Namiki ,  Osamu Nabeya ,  Shingo Togashi ,  Tomoko Owada ,  Yoshikazu Kato

IPC: H01L21/687 ,  B24B7/04 ,  B24B37/10 ,  B24B37/30

CPC classification number: H01L21/68707 ,  B24B7/04 ,  B24B37/107 ,  B24B37/30

Abstract: An elastic membrane to be used for a polishing head includes a contact portion configured to come into contact with a wafer, an annular side wall provided to stand on an outer peripheral end of the contact portion, a first partition wall linearly extending inward in a radial direction in sectional view from the side wall, and a second partition wall linearly extending inward and upward in the radial direction in sectional view from an outer peripheral end portion of the contact portion, wherein the first partition wall, the second partition wall, and the side wall constitute an edge pressure chamber for pressing an edge of the wafer.

公开(公告)号：US20240207999A1

公开(公告)日：2024-06-27

申请号：US18518570

申请日：2023-11-23

Applicant: EBARA CORPORATION

Inventor： HIROKI MIYAMOTO

IPC: B24B37/30

CPC classification number: B24B37/30

Abstract: A substrate drying device as a substrate rotation processing device includes: a substrate holding mechanism, holding a substrate horizontally; a rotating cover, configured to surround the substrate and having a side wall part surrounding the substrate and a bottom surface part in an inner side of the side wall part; a rotation mechanism, rotating the substrate held by the substrate holding mechanism and the rotating cover; and a gas supply nozzle, supplying gas with respect to a back surface of the substrate held by the substrate holding mechanism through the bottom surface part of the rotating cover. Multiple discharge holes for discharging gas supplied from the gas supply nozzle are formed on the bottom surface part of the rotating cover. The discharge holes have inclined surfaces formed inclined with respect to a rotating surface of the rotating cover.

公开(公告)号：US20240181598A1

公开(公告)日：2024-06-06

申请号：US18438148

申请日：2024-02-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Lung LAI ,  Cheng-Ping CHEN ,  Shih-Chung CHEN ,  Sheng-Tai PENG

IPC: B24B37/30 ,  B24B37/04 ,  H01L21/306 ,  H01L21/67 ,  H01L21/677

CPC classification number: B24B37/30 ,  B24B37/042 ,  H01L21/30625 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67219 ,  H01L21/67253 ,  H01L21/67742

Abstract: In an embodiment, a chemical mechanical planarization (CMP) system includes: a monolithic platen within a platen housing, wherein the monolithic platen is formed of a single piece of material, wherein the monolithic platen includes: a first portion within a first opening, and a second portion within a second opening, wherein the first portion has a different diameter than the second portion; and a polishing fluid delivery module above the monolithic platen, wherein the polishing fluid delivery module is configured to deliver slurry to the monolithic platen during performance of CMP.

公开(公告)号：US11969855B2

公开(公告)日：2024-04-30

申请号：US18198587

申请日：2023-05-17

Applicant: Applied Materials, Inc.

Inventor： Sivakumar Dhandapani

IPC: B24B37/013 ,  B24B37/30 ,  B24B49/10

CPC classification number: B24B37/013 ,  B24B49/10 ,  B24B37/30 ,  G05B2219/49085

Abstract: A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, filtering a signal from the monitoring system to generate a filtered signal, and determining at least one of a polishing endpoint or an adjustment for a polishing rate from the filtered signal. The filtering includes modelling a plurality of periodic disturbances at a plurality of different frequencies using a plurality of disturbance states, modelling an underlying signal using a plant state, and applying a linear prediction filter to the plant state and the plurality of disturbance states to generate a filtered signal representing the underlying signal.

公开(公告)号：US20240109164A1

公开(公告)日：2024-04-04

申请号：US17959076

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Chang ZHANG ,  Jian J. CHEN ,  Quoc TRUONG ,  Jamie Stuart LEIGHTON

IPC: B24B49/16 ,  B24B37/30 ,  B24B49/12

CPC classification number: B24B49/16 ,  B24B37/30 ,  B24B49/12

Abstract: A polishing system includes a pressure system, a substrate carrier including a membrane, a first sensor, and a control system. A first compartment of the membrane is fluidly coupled to the pressure system. The first sensor is configured to monitor the pressure system and produce a first output based on conditions detected in the pressure system. The control system coupled to the first sensor and configured to process the first output to produce a first processed output, and the control system configured to compare the first processed output to a threshold to detect a presence of a fluid in the pressure system.

公开(公告)号：US11904430B2

公开(公告)日：2024-02-20

申请号：US16511649

申请日：2019-07-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kei-Wei Chen ,  Chih Hung Chen

IPC: B24B37/015 ,  B24B37/20 ,  B24B37/30 ,  B24B53/017

CPC classification number: B24B37/015 ,  B24B37/20 ,  B24B37/30 ,  B24B53/017

Abstract: A method includes polishing a wafer on a polishing pad, performing conditioning on the polishing pad using a disk of a pad conditioner, and conducting a heat-exchange media into the disk. The heat-exchange media conducted into the disk has a temperature different from a temperature of the polishing pad.

公开(公告)号：US11869815B2

公开(公告)日：2024-01-09

申请号：US17696813

申请日：2022-03-16

Applicant: Applied Materials, Inc.

Inventor： Eric Lau ,  Charles C. Garretson ,  Huanbo Zhang ,  Zhize Zhu

IPC: H01L21/66 ,  B25J9/16 ,  H01L21/306 ,  H01L21/67 ,  H01L21/687 ,  B24B37/30 ,  B24B49/12

CPC classification number: H01L22/26 ,  B24B37/30 ,  B24B49/12 ,  B25J9/1628 ,  H01L21/30625 ,  H01L21/67219 ,  H01L21/67253 ,  H01L21/68707 ,  H01L22/20 ,  H01L22/12

Abstract: A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate. Prior to polishing the substrate, a desired angle of the carrier head relative to the substrate is selected for loading the substrate into the carrier head. Selecting the desired angle is performed based on a comparison of the angular removal profile for the carrier head and the angular thickness profile of the substrate to reduce angular non-uniformity in polishing. The carrier head is rotated to receive the substrate at the desired angle, the substrate is transferred to the carrier head and loaded in the carrier head with the carrier head at the desired angle relative to the substrate, and the substrate is polished.