-
公开(公告)号：US12131896B2
公开(公告)日：2024-10-29
申请号：US17461040
申请日：2021-08-30
Inventor： Kei-Wei Chen , Chih Hung Chen
CPC classification number: H01L21/02016 , A46B13/001 , B08B1/12 , B08B1/32 , B24B7/228 , H01L21/02024 , H01L21/02054 , A46B2200/3073 , A46B2200/3093
Abstract: A method of cleaning and polishing a backside surface of a semiconductor wafer is provided. The method includes placing an abrasive brush, comprising an abrasive tape wound around an outer surface of a brush member of the abrasive brush, on the backside surface of the semiconductor wafer. The method also includes rotating the brush member to polish the backside surface of the semiconductor wafer by abrasive grains formed on the abrasive tape and to clean the backside surface of the semiconductor wafer by the brush member which is not covered by the abrasive tape.
-
公开(公告)号：US12068169B2
公开(公告)日：2024-08-20
申请号：US17446248
申请日：2021-08-27
Inventor： Ji Cui , Chih Hung Chen , Liang-Guang Chen , Kei-Wei Chen
IPC: H01L21/321 , H01L21/67 , H01L21/768
CPC classification number: H01L21/3212 , H01L21/67046 , H01L21/67051 , H01L21/76814
Abstract: A semiconductor processing tool includes a cleaning chamber configured to perform a post-chemical mechanical polishing/planarization (post-CMP) cleaning operation in an oxygen-free (or in a near oxygen-free) manner. An inert gas may be provided into the cleaning chamber to remove oxygen from the cleaning chamber such that the post-CMP cleaning operation may be performed in an oxygen-free (or in a near oxygen-free) environment. In this way, the post-CMP cleaning operation may be performed in an environment that may reduce oxygen-causing corrosion of metallization layers and/or metallization structures on and/or in the semiconductor wafer, which may increase semiconductor processing yield, may decrease semiconductor processing defects, and/or may increase semiconductor processing quality, among other examples.
-
公开(公告)号：US11904430B2
公开(公告)日：2024-02-20
申请号：US16511649
申请日：2019-07-15
Inventor： Kei-Wei Chen , Chih Hung Chen
IPC: B24B37/015 , B24B37/20 , B24B37/30 , B24B53/017
CPC classification number: B24B37/015 , B24B37/20 , B24B37/30 , B24B53/017
Abstract: A method includes polishing a wafer on a polishing pad, performing conditioning on the polishing pad using a disk of a pad conditioner, and conducting a heat-exchange media into the disk. The heat-exchange media conducted into the disk has a temperature different from a temperature of the polishing pad.
-
公开(公告)号：US20190224810A1
公开(公告)日：2019-07-25
申请号：US16025913
申请日：2018-07-02
Inventor： Chih Hung Chen , Kei-Wei Chen , Ying-Lang Wang
Abstract: A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.
-
公开(公告)号：US11517995B2
公开(公告)日：2022-12-06
申请号：US16448963
申请日：2019-06-21
Inventor： Ji James Cui , Chia-Hsun Chang , Chih Hung Chen , Liang-Guang Chen , Tzu Kai Lin , Chyi Shyuan Chern , Keith Kuang-Kuo Koai
IPC: B24B49/00 , B24B37/015 , B24B57/02 , B24B37/34
Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.
-
Patent Agency Ranking
公开(公告)号：US11679469B2
公开(公告)日：2023-06-20
申请号：US16550021
申请日：2019-08-23
Inventor： Michael Yen , Kao-Feng Liao , Hsin-Ying Ho , Chun-Wen Hsiao , Sheng-Chao Chuang , Ting-Hsun Chang , Fu-Ming Huang , Chun-Chieh Lin , Peng-Chung Jangjian , Ji James Cui , Liang-Guang Chen , Chih Hung Chen , Kei-Wei Chen
IPC: B24B37/26 , B24B37/005 , B24B37/24 , B24B37/04
CPC classification number: B24B37/26 , B24B37/005 , B24B37/042 , B24B37/24
Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
-
公开(公告)号：US20210053180A1
公开(公告)日：2021-02-25
申请号：US16550021
申请日：2019-08-23
Inventor： Michael Yen , Kao-Feng Liao , Hsin-Ying Ho , Chun-Wen Hsiao , Sheng-Chao Chuang , Ting-Hsun Chang , Fu-Ming Huang , Chun-Chieh Lin , Peng-Chung Jangjian , Ji James Cui , Liang-Guang Chen , Chih Hung Chen , Kei-Wei Chen
IPC: B24B37/26 , B24B37/24 , B24B37/005
Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
-
公开(公告)号：US20210020449A1
公开(公告)日：2021-01-21
申请号：US16515938
申请日：2019-07-18
Inventor： Te-Chien Hou , Yu-Ting Yen , Cheng-Yu Kuo , Chih Hung Chen , William Weilun Hong , Kei-Wei Chen
IPC: H01L21/3105 , H01L29/66 , B24B37/04 , B24B37/20
Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.
-
公开(公告)号：US10804370B2
公开(公告)日：2020-10-13
申请号：US15875289
申请日：2018-01-19
Inventor： Chih Hung Chen , Kei-Wei Chen , Ying-Lang Wang
Abstract: In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.
-
公开(公告)号：US20190030675A1
公开(公告)日：2019-01-31
申请号：US15664092
申请日：2017-07-31
Inventor： Kei-Wei Chen , Chih Hung Chen
IPC: B24B37/015 , B24B37/20
CPC classification number: B24B37/015 , B24B37/20 , B24B37/30 , B24B53/017
Abstract: A method includes polishing a wafer on a polishing pad, performing conditioning on the polishing pad using a disk of a pad conditioner, and conducting a heat-exchange media into the disk. The heat-exchange media conducted into the disk has a temperature different from a temperature of the polishing pad.
-
-
-
-
-
-
-
-
-
Search Results
17
records
(took 0.019 seconds)
