公开(公告)号：US09941109B2

公开(公告)日：2018-04-10

申请号：US15197439

申请日：2016-06-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Che-Hao Tu ,  Po-Chin Nien ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  B24B37/04 ,  H01L21/321 ,  B24B1/00

CPC classification number: H01L21/02052 ,  B24B1/00 ,  B24B37/044 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

Abstract: A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.

公开(公告)号：US10068988B2

公开(公告)日：2018-09-04

申请号：US15860308

申请日：2018-01-02

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： William Weilun Hong ,  Po-Chin Nien ,  Ying-Tsung Chen

IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/088 ,  H01L27/11 ,  H01L29/66

Abstract: A method includes forming a polysilicon layer with an uneven upper surface over a first region and a second region of a substrate, doping a top portion of the polysilicon layer to change its removal rate, thereby forming a doped layer, and removing the doped layer in the first region to expose the polysilicon layer in the first region and leaving at least a portion of the doped layer in the second region. The method also includes removing the exposed polysilicon layer in the first region at a first removal rate and the doped layer in the second region at a second removal rate, the polysilicon layer in the second region being exposed after the doped layer in the second region is removed, and removing the polysilicon layer in the first region and the second region at a third removal rate and a fourth removal rate, respectively.

公开(公告)号：US09871115B1

公开(公告)日：2018-01-16

申请号：US15200966

申请日：2016-07-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： William Weilun Hong ,  Po-Chin Nien ,  Ying-Tsung Chen

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L27/11

CPC classification number: H01L29/66545 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0653

Abstract: A method includes forming a polysilicon layer with an uneven upper surface over a first region and a second region of a substrate, doping a top portion of the polysilicon layer to change its removal rate, thereby forming a doped layer, and removing the doped layer in the first region to expose the polysilicon layer in the first region and leaving at least a portion of the doped layer in the second region. The method also includes removing the exposed polysilicon layer in the first region at a first removal rate and the doped layer in the second region at a second removal rate, the polysilicon layer in the second region being exposed after the doped layer in the second region is removed, and removing the polysilicon layer in the first region and the second region at a third removal rate and a fourth removal rate, respectively.

公开(公告)号：US20180005840A1

公开(公告)日：2018-01-04

申请号：US15197439

申请日：2016-06-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Che-Hao Tu ,  Po-Chin Nien ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/02052 ,  B24B1/00 ,  B24B37/044 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

Abstract: A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.

公开(公告)号：US10971370B2

公开(公告)日：2021-04-06

申请号：US16715466

申请日：2019-12-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Che-Hao Tu ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/3105 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/28

Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.

公开(公告)号：US20210020449A1

公开(公告)日：2021-01-21

申请号：US16515938

申请日：2019-07-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Te-Chien Hou ,  Yu-Ting Yen ,  Cheng-Yu Kuo ,  Chih Hung Chen ,  William Weilun Hong ,  Kei-Wei Chen

IPC: H01L21/3105 ,  H01L29/66 ,  B24B37/04 ,  B24B37/20

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

公开(公告)号：US20180006134A1

公开(公告)日：2018-01-04

申请号：US15200966

申请日：2016-07-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： William Weilun Hong ,  Po-Chin Nien ,  Ying-Tsung Chen

IPC: H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L27/11

CPC classification number: H01L29/66545 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0653

Abstract: A method includes forming a polysilicon layer with an uneven upper surface over a first region and a second region of a substrate, doping a top portion of the polysilicon layer to change its removal rate, thereby forming a doped layer, and removing the doped layer in the first region to expose the polysilicon layer in the first region and leaving at least a portion of the doped layer in the second region. The method also includes removing the exposed polysilicon layer in the first region at a first removal rate and the doped layer in the second region at a second removal rate, the polysilicon layer in the second region being exposed after the doped layer in the second region is removed, and removing the polysilicon layer in the first region and the second region at a third removal rate and a fourth removal rate, respectively.

公开(公告)号：US20170162432A1

公开(公告)日：2017-06-08

申请号：US14958443

申请日：2015-12-03

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Po-Chin Nien ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/762 ,  H01L21/321 ,  H01L29/66

CPC classification number: H01L21/76229 ,  H01L21/3212 ,  H01L29/66795

Abstract: A method includes forming a plurality of first semiconductor fins and a plurality of second semiconductor fins in a substrate, depositing a gate electrode layer over the substrate, wherein upper portions of the plurality of first semiconductor fins and the plurality of second semiconductor fins are embedded in the gate electrode layer, depositing a reverse film over the gate electrode layer and applying a chemical mechanical polish process to the reverse film and the gate electrode layer, wherein during the step of applying the chemical mechanical polish process, depositing a slurry between a polishing pad and the reverse film, and wherein a slurry selectivity ratio of the gate electrode layer to the reverse film is greater than 1.

公开(公告)号：US20150099431A1

公开(公告)日：2015-04-09

申请号：US14048967

申请日：2013-10-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： William Weilun Hong ,  Kuo-Min Lin ,  Ying-Tsung Chen

IPC: B24C9/00 ,  B24C1/08

CPC classification number: B24B37/042 ,  B01D29/52 ,  B24B57/02

Abstract: A method for breaking up Chemical Mechanical Polishing (CMP) slurry particles includes receiving a CMP slurry comprising particles suspended in a solution, placing the slurry into a first agitation tank, and agitating the slurry at a first frequency. The first frequency is selected to break up particles having a size within a specified range.

Abstract translation: 分解化学机械抛光（CMP）浆料颗粒的方法包括接收包含悬浮在溶液中的颗粒的CMP浆料，将浆料放入第一搅拌槽中，并以第一频率搅拌浆料。 选择第一个频率以将尺寸在特定范围内的颗粒分解。

公开(公告)号：US11189497B2

公开(公告)日：2021-11-30

申请号：US16415981

申请日：2019-05-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Po-Chin Nien ,  Gang Huang ,  William Weilun Hong

IPC: H01L21/321 ,  H01L21/768 ,  H01L21/02 ,  H01L21/67 ,  C09G1/02

Abstract: A method includes forming a film over a substrate; increasing a surface roughness of the film; and planarizing the film using a first chemical mechanical planarization (CMP) process after increasing the surface roughness.