公开(公告)号：US20200101582A1

公开(公告)日：2020-04-02

申请号：US16252183

申请日：2019-01-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Hao-Yun Cheng ,  Che-Hao Tu ,  Kei-Wei Chen

IPC: B24B57/02 ,  B24B37/10 ,  B24B37/30 ,  B24B37/04 ,  H01L21/306

Abstract: A system controls a flow of a chemical mechanical polish (CMP) slurry into a chamber to form a slurry reservoir within the chamber. Once the slurry reservoir has been formed within the chamber, the system moves a polishing head to position and force a surface of a wafer that is attached to the polishing head into contact with a polishing pad attached to a platen within the chamber. A wafer/pad interface is formed at the surface of the wafer forced into contact with the polishing pad and the wafer/pad interface is disposed below an upper surface of the slurry reservoir. During CMP processing, the system controls one or more of a level, a force, and a rotation of the platen, a position, a force and a rotation of the polishing head to conduct the CMP processing of the surface of the wafer at the wafer/pad interface.

公开(公告)号：US10800004B2

公开(公告)日：2020-10-13

申请号：US16252183

申请日：2019-01-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Hao-Yun Cheng ,  Che-Hao Tu ,  Kei-Wei Chen

IPC: B24B57/02 ,  B24B37/10 ,  H01L21/306 ,  B24B37/30 ,  B24B37/04

Abstract: A system controls a flow of a chemical mechanical polish (CMP) slurry into a chamber to form a slurry reservoir within the chamber. Once the slurry reservoir has been formed within the chamber, the system moves a polishing head to position and force a surface of a wafer that is attached to the polishing head into contact with a polishing pad attached to a platen within the chamber. A wafer/pad interface is formed at the surface of the wafer forced into contact with the polishing pad and the wafer/pad interface is disposed below an upper surface of the slurry reservoir. During CMP processing, the system controls one or more of a level, a force, and a rotation of the platen, a position, a force and a rotation of the polishing head to conduct the CMP processing of the surface of the wafer at the wafer/pad interface.

公开(公告)号：US09941109B2

公开(公告)日：2018-04-10

申请号：US15197439

申请日：2016-06-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Che-Hao Tu ,  Po-Chin Nien ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  B24B37/04 ,  H01L21/321 ,  B24B1/00

CPC classification number: H01L21/02052 ,  B24B1/00 ,  B24B37/044 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

Abstract: A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.

公开(公告)号：US12128455B2

公开(公告)日：2024-10-29

申请号：US17887718

申请日：2022-08-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Yeo-Sin Lin ,  Shu-Wei Hsu ,  Che-Hao Tu ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B08B3/10 ,  B08B1/12 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B57/02

CPC classification number: B08B3/10 ,  B08B1/12 ,  B24B37/044 ,  B24B37/046 ,  B24B37/105 ,  B24B37/30 ,  B24B57/02

Abstract: A method comprising: providing a slurry to a polishing pad that is disposed on a wafer platen, the slurry comprising a plurality of electrically charged abrasive particles having a first electrical polarity; moving a first side of a wafer into contact with the slurry and the polishing pad;
applying a first electrical charge having a second electrical polarity, opposite the first electrical polarity, to a first conductive rod; moving the first side of the wafer away from the polishing pad while the first electrical charge is applied to the first conductive rod; moving a first wafer brush into contact with the first side of the wafer; applying a second electrical charge having the second electrical polarity, opposite the first electrical polarity, to a second conductive rod arranged within the first wafer brush; and moving the first wafer brush away from the first side of the wafer.

公开(公告)号：US20240050995A1

公开(公告)日：2024-02-15

申请号：US17887718

申请日：2022-08-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Yeo-Sin Lin ,  Shu-Wei Hsu ,  Che-Hao Tu ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B08B3/10 ,  B08B1/00 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B57/02

CPC classification number: B08B3/10 ,  B08B1/002 ,  B24B37/044 ,  B24B37/046 ,  B24B37/105 ,  B24B37/30 ,  B24B57/02

Abstract: A process tool including a polishing pad on a top surface of a wafer platen. A wafer carrier is configured to hold a wafer over the polishing pad. A slurry dispenser is configured to dispense an abrasive slurry including a plurality of charged abrasive particles having a first polarity onto the polishing pad. A first conductive rod is within the wafer platen and coupled to a first voltage supply. A wafer roller is configured to support the wafer. A first wafer brush is arranged beside the wafer roller. A second conductive rod is within the first wafer brush and coupled to a second voltage supply. The first voltage supply is configured to apply a first charge having a second polarity, opposite the first polarity, to the first conductive rod. The second voltage supply is configured to apply a second charge having the second polarity to the second conductive rod.

公开(公告)号：US20240367202A1

公开(公告)日：2024-11-07

申请号：US18777692

申请日：2024-07-19

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Yeo-Sin Lin ,  Shu-Wei Hsu ,  Che-Hao Tu ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B08B3/10 ,  B08B1/12 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B57/02

Abstract: A process tool including a polishing pad on a top surface of a wafer platen. A wafer carrier is configured to hold a wafer over the polishing pad. A slurry dispenser is configured to dispense an abrasive slurry including a plurality of charged abrasive particles having a first polarity onto the polishing pad. A first conductive rod is within the wafer platen and coupled to a first voltage supply. A wafer roller is configured to support the wafer. A first wafer brush is arranged beside the wafer roller. A second conductive rod is within the first wafer brush and coupled to a second voltage supply. The first voltage supply is configured to apply a first charge having a second polarity, opposite the first polarity, to the first conductive rod. The second voltage supply is configured to apply a second charge having the second polarity to the second conductive rod.

公开(公告)号：US20180005840A1

公开(公告)日：2018-01-04

申请号：US15197439

申请日：2016-06-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Wen Liu ,  Che-Hao Tu ,  Po-Chin Nien ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/02052 ,  B24B1/00 ,  B24B37/044 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67219

Abstract: A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.