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公开(公告)号：US20240050995A1
公开(公告)日：2024-02-15
申请号：US17887718
申请日：2022-08-15
Inventor： Chih-Wen Liu , Yeo-Sin Lin , Shu-Wei Hsu , Che-Hao Tu , Hui-Chi Huang , Kei-Wei Chen
CPC classification number: B08B3/10 , B08B1/002 , B24B37/044 , B24B37/046 , B24B37/105 , B24B37/30 , B24B57/02
Abstract: A process tool including a polishing pad on a top surface of a wafer platen. A wafer carrier is configured to hold a wafer over the polishing pad. A slurry dispenser is configured to dispense an abrasive slurry including a plurality of charged abrasive particles having a first polarity onto the polishing pad. A first conductive rod is within the wafer platen and coupled to a first voltage supply. A wafer roller is configured to support the wafer. A first wafer brush is arranged beside the wafer roller. A second conductive rod is within the first wafer brush and coupled to a second voltage supply. The first voltage supply is configured to apply a first charge having a second polarity, opposite the first polarity, to the first conductive rod. The second voltage supply is configured to apply a second charge having the second polarity to the second conductive rod.
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2.发明授权公开(公告)号：US11417566B2
公开(公告)日：2022-08-16
申请号：US16382641
申请日：2019-04-12
Inventor： Chun-Hao Kung , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/768 , H01L29/66 , H01L21/02
Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
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公开(公告)号：US20210202239A1
公开(公告)日：2021-07-01
申请号：US16727533
申请日：2019-12-26
Inventor： Hui-Chi Huang , Jeng-Chi Lin , Pin-Chuan Su , Chien-Ming Wang , Kei-Wei Chen
Abstract: A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.
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公开(公告)号：US10957609B2
公开(公告)日：2021-03-23
申请号：US16221717
申请日：2018-12-17
Inventor： Yu-Ting Yen , Chi-Ming Tsai , Hui-Chi Huang
IPC: H01L21/00 , H01L21/66 , H01L21/306 , H01L21/02 , G01N21/3563 , G01N21/65 , G01N21/59 , G01N15/02 , G01N21/53 , G01N21/55 , G01N21/94 , G01N21/95 , G01N15/14 , G01N21/35 , G01N15/00
Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.
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公开(公告)号：US10953514B1
公开(公告)日：2021-03-23
申请号：US16572895
申请日：2019-09-17
Inventor： Shang-Yu Wang , Chun-Hao Kung , Ching-Hsiang Tsai , Kei-Wei Chen , Hui-Chi Huang
IPC: B24B37/005 , H01L21/304 , B24B37/10 , H01L21/306 , B24B37/04
Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.
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Patent Agency Ranking
公开(公告)号：US11590627B2
公开(公告)日：2023-02-28
申请号：US16516006
申请日：2019-07-18
Inventor： Chun-Hao Kung , Shang-Yu Wang , Ching-Hsiang Tsai , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , H01L21/3105 , B24B37/10 , B24B37/04 , B24B37/32 , H01L21/768
Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.
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公开(公告)号：US20210078130A1
公开(公告)日：2021-03-18
申请号：US16572895
申请日：2019-09-17
Inventor： Shang-Yu Wang , Chun-Hao Kung , Ching-Hsiang Tsai , Kei-Wei Chen , Hui-Chi Huang
IPC: B24B37/10 , B24B37/04 , H01L21/306
Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.
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公开(公告)号：US10777423B2
公开(公告)日：2020-09-15
申请号：US16003111
申请日：2018-06-08
Inventor： Tung-Kai Chen , Ching-Hsiang Tsai , Kao-Feng Liao , Chih-Chieh Chang , Chun-Hao Kung , Fang-I Chih , Hsin-Ying Ho , Chia-Jung Hsu , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , H01L21/3105 , H01L21/28
Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.
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9.发明申请公开(公告)号：US20200043777A1
公开(公告)日：2020-02-06
申请号：US16382641
申请日：2019-04-12
Inventor： Chun-Hao Kung , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/768
Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
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公开(公告)号：US20150147883A1
公开(公告)日：2015-05-28
申请号：US14087367
申请日：2013-11-22
Inventor： Hui-Chi Huang
IPC: H01L21/02 , H01L21/306 , H01L21/67
CPC classification number: H01L21/02065 , H01L21/02074 , H01L21/67057
Abstract: A method of performing a post Chemical Mechanical Polish (CMP) cleaning includes picking up the wafer, spinning a cleaning solution contained in a cleaning tank, and submerging the wafer into the cleaning solution, with the cleaning solution being spun when the wafer is in the cleaning solution. After the submerging the wafer into the cleaning solution, the wafer is retrieved out of the cleaning solution.
Abstract translation: 执行后期化学机械抛光（CMP）清洁的方法包括拾取晶片，旋转包含在清洗槽中的清洁溶液，以及将晶片浸入清洁溶液中，当晶片处于 清洗液。 在将晶片浸入清洁溶液中之后，将晶片从清洁溶液中取出。
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