公开(公告)号：US11373879B2

公开(公告)日：2022-06-28

申请号：US17019234

申请日：2020-09-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tung-Kai Chen ,  Ching-Hsiang Tsai ,  Kao-Feng Liao ,  Chih-Chieh Chang ,  Chun-Hao Kung ,  Fang-I Chih ,  Hsin-Ying Ho ,  Chia-Jung Hsu ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L21/3105 ,  H01L21/28

Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.

公开(公告)号：US20210016415A1

公开(公告)日：2021-01-21

申请号：US16516006

申请日：2019-07-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Hao Kung ,  Shang-Yu Wang ,  Ching-Hsiang Tsai ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B37/10 ,  B24B37/04 ,  B24B37/32 ,  H01L21/321 ,  H01L21/3105

Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

公开(公告)号：US11590627B2

公开(公告)日：2023-02-28

申请号：US16516006

申请日：2019-07-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Hao Kung ,  Shang-Yu Wang ,  Ching-Hsiang Tsai ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L21/3105 ,  B24B37/10 ,  B24B37/04 ,  B24B37/32 ,  H01L21/768

Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

公开(公告)号：US20210078130A1

公开(公告)日：2021-03-18

申请号：US16572895

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC: B24B37/10 ,  B24B37/04 ,  H01L21/306

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

公开(公告)号：US10777423B2

公开(公告)日：2020-09-15

申请号：US16003111

申请日：2018-06-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tung-Kai Chen ,  Ching-Hsiang Tsai ,  Kao-Feng Liao ,  Chih-Chieh Chang ,  Chun-Hao Kung ,  Fang-I Chih ,  Hsin-Ying Ho ,  Chia-Jung Hsu ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L21/3105 ,  H01L21/28

Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.

公开(公告)号：US10953514B1

公开(公告)日：2021-03-23

申请号：US16572895

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC: B24B37/005 ,  H01L21/304 ,  B24B37/10 ,  H01L21/306 ,  B24B37/04

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.