POWER DEVICE
    1.
    发明申请
    POWER DEVICE 审中-公开

    公开(公告)号:US20180191247A1

    公开(公告)日:2018-07-05

    申请号:US15587742

    申请日:2017-05-05

    摘要: The invention provides a power device, which includes: an operation layer, including a top surface, a body region and a drift region, the body region and the drift region being connected in a lateral direction, to form a PN junction along a channel width direction between the body region and the drift region; a gate, formed on the top surface, and the PN junction is located under the gate; a source, formed in a portion of the operation layer between the body region and the top surface; a drain, formed in another portion of the operation layer between the drift region and the top surface; a first conduction portion, formed on the top surface for electrically connecting the source; a conduction layer, formed on the first conduction portion and electrically connected to the source via the first conduction portion; and a second conduction portion, formed on the top surface and between the conduction layer and the drift region in a thickness direction, for electrically connecting the drift region and the conduction layer, wherein a Schottky diode is formed by the second conduction portion and the drift region.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20170069624A1

    公开(公告)日:2017-03-09

    申请号:US15042473

    申请日:2016-02-12

    发明人: Keita Takahashi

    IPC分类号: H01L27/06 H01L29/78 H01L29/06

    摘要: According to one embodiment, the insulating film is provided between the anode region and the cathode region in the surface of the second semiconductor region. The third semiconductor region is provided inside the second semiconductor region. The third semiconductor region covers a corner of the insulating film on the anode region side. The first electrode contacts the anode region and the third semiconductor region. The second electrode contacts the cathode region. The third electrode is provided on the insulating film and positioned on a p-n junction between the second semiconductor region and the third semiconductor region.

    摘要翻译: 根据一个实施例,绝缘膜设置在第二半导体区域的表面中的阳极区域和阴极区域之间。 第三半导体区域设置在第二半导体区域内。 第三半导体区域覆盖阳极区域侧的绝缘膜的角部。 第一电极接触阳极区域和第三半导体区域。 第二电极接触阴极区域。 第三电极设置在绝缘膜上并且位于第二半导体区域和第三半导体区域之间的p-n结上。

    Electronic device including a vertical conductive structure
    4.
    发明授权
    Electronic device including a vertical conductive structure 有权
    电子设备包括垂直导电结构

    公开(公告)号:US09490358B2

    公开(公告)日:2016-11-08

    申请号:US14628987

    申请日:2015-02-23

    摘要: An electronic device can include a buried conductive region and a semiconductor layer over the buried conductive region. The electronic device can further include a horizontally-oriented doped region and a vertical conductive region, wherein the vertical conductive region is electrically connected to the horizontally-oriented doped region and the buried conductive region. The electronic device can still further include an insulating layer overlying the horizontally-oriented doped region, and a first conductive electrode overlying the insulating layer and the horizontally-oriented doped region, wherein a portion of the vertical conductive region does not underlie the first conductive electrode. The electronic device can include a Schottky contact that allows for a Schottky diode to be connected in parallel with a transistor. Processes of forming an electronic device allow a vertical conductive region to be formed after a conductive electrode, a gate electrode, a source region, or both.

    摘要翻译: 电子器件可以包括掩埋导电区域和掩埋导电区域上的半导体层。 电子器件还可以包括水平取向的掺杂区域和垂直导电区域,其中垂直导电区域电连接到水平取向掺杂区域和掩埋导电区域。 电子器件还可以进一步包括覆盖水平取向的掺杂区域的绝缘层和覆盖绝缘层和水平取向的掺杂区域的第一导电电极,其中垂直导电区域的一部分不在第一导电电极 。 电子器件可以包括肖特基接触,其允许将肖特基二极管与晶体管并联连接。 形成电子器件的工艺允许在导电电极,栅极电极,源极区域或两者之后形成垂直导电区域。