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公开(公告)号：US20240363334A1
公开(公告)日：2024-10-31
申请号：US18609345
申请日：2024-03-19
发明人： Keitaro HAMADA , Masaya NISHIDA
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , C23C16/52
CPC分类号： H01L21/02118 , C23C16/347 , C23C16/45527 , C23C16/45544 , C23C16/52 , H01L21/0228
摘要： There is provided a technique that includes: (a) performing a cycle including supplying a source containing a predetermined element, carbon, and hydrogen to a substrate and supplying a first modifying agent containing nitrogen to the substrate, a predetermined number of times to form, on the substrate, a first film containing the predetermined element, nitrogen, carbon, and hydrogen bonded to carbon; and (b) supplying, to the substrate on which the first film is formed, a second modifying agent that is different from the first modifying agent and contains a compound containing a nitrogen-hydrogen bond and a nitrogen-nitrogen bond per molecule or a derivative of the compound, to modify the first film to a second film that is lower in content rate of the hydrogen bonded to carbon than the first film and contains the predetermined element, carbon, and nitrogen.
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公开(公告)号：US20240332024A1
公开(公告)日：2024-10-03
申请号：US18599877
申请日：2024-03-08
发明人： Yutaka MATSUNO , Atsuro Seino , Arito Ogawa
IPC分类号： H01L21/285 , H01L21/02 , H01L21/67
CPC分类号： H01L21/28556 , H01L21/0228 , H01L21/67017 , H01L21/67207
摘要： A technique includes forming a film containing a first element and a second element different from the first element on the substrate by performing a process a predetermined number of times, the process including: (a) supplying a first gas containing the first element and a halogen element to the substrate; (b) supplying a second gas containing the second element to the substrate; (c) supplying a third gas containing a third element and having a reducing character to the substrate; and (d) supplying a fourth gas containing a fourth element and having a reducing character to the substrate, wherein (a) and (d) are performed consecutively, and (b) and (c) are performed consecutively.
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3.发明公开公开(公告)号：US20240319021A1
公开(公告)日：2024-09-26
申请号：US18591209
申请日：2024-02-29
发明人： Kento NAKANISHI , Hideto Yamaguchi
CPC分类号： G01K7/427 , G01K7/04 , H01L21/67248 , H01L22/12
摘要： There is provided a technique that includes: a heater arranged in each of a plurality of zones; at least one first temperature sensor configured to be capable of operating in conjunction with at least one substrate; another temperature sensor aside from the at least one first temperature sensor; and a controller configured to be capable of controlling the heater based on a temperature detected by either the at least one first temperature sensor or the another temperature sensor, wherein the either the at least one first temperature sensor or the another temperature sensor is assigned to each of the plurality of zones.
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公开(公告)号：US20240309509A1
公开(公告)日：2024-09-19
申请号：US18588105
申请日：2024-02-27
IPC分类号： C23C16/46 , C23C16/458
CPC分类号： C23C16/466 , C23C16/4585
摘要： There is provided a technique that includes: transferring a substrate from a process chamber to a transfer chamber, after processing the substrate disposed at the process chamber while detecting a temperature by a temperature sensor installed at a substrate support configured to support the substrate; and cooling the substrate so that the temperature detected by the temperature sensor becomes equal to or lower than a set temperature while the substrate support is located at a predetermined position.
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公开(公告)号：US12087598B2
公开(公告)日：2024-09-10
申请号：US15919674
申请日：2018-03-13
发明人： Hideto Tateno , Daisuke Hara , Masahisa Okuno , Takuya Joda , Takashi Tsukamoto , Akinori Tanaka , Toru Kakuda , Sadayoshi Horii
IPC分类号： H01L21/67 , C23C16/448 , H01L21/02 , H01L21/673 , H01L21/677
CPC分类号： H01L21/67017 , C23C16/4481 , H01L21/67109 , H01L21/67248 , H01L21/02164 , H01L21/02222 , H01L21/02326 , H01L21/02337 , H01L21/67303 , H01L21/67757
摘要： A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.
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公开(公告)号：US12080149B2
公开(公告)日：2024-09-03
申请号：US17882172
申请日：2022-08-05
CPC分类号： G08B29/04 , F27D21/04 , G05B23/027 , F27B17/0025 , G08B21/182 , H01L21/67313
摘要： According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an apparatus controller including a memory storing apparatus data containing monitor data containing sensor information and an alarm indicating a failure detected based on the sensor information and an alarm analysis table containing analysis items. The apparatus controller is capable of outputting the alarm containing an alarm ID for specifying a type and an occurrence time of the alarm; specifying candidates of the analysis items from the alarm ID; acquiring monitor data corresponding to the candidates; determining a rank of the cause of the alarm according to a difference between monitor data at the occurrence time and a predetermined threshold value; and displaying a relationship between the monitor data and the threshold value. The display screen displays an occurrence history of the alarm and history of acquiring the monitor data.
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公开(公告)号：US20240274455A1
公开(公告)日：2024-08-15
申请号：US18648866
申请日：2024-04-29
发明人： Hiroshi ASHIHARA , Yuji TAKEBAYASHI
IPC分类号： H01L21/677 , H01L21/67 , H01L21/687
CPC分类号： H01L21/67712 , H01L21/67173 , H01L21/67201 , H01L21/67736 , H01L21/67745 , H01L21/68764
摘要： There is provided a technique that includes: at least one process chamber in which at least one substrate is processed; a mounting stage configured to be capable of mounting the at least one substrate on the mounting stage; a transport chamber including a conveyor configured to be capable of holding the mounting stage at least two places in a vertical direction and transporting the mounting stage; and a controller configured to be capable of performing a transport control of the conveyor in the transport chamber.
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公开(公告)号：US12050138B2
公开(公告)日：2024-07-30
申请号：US17532426
申请日：2021-11-22
发明人： Akihiro Osaka , Hideto Yamaguchi , Tetsuya Kosugi , Tokunobu Akao , Atsushi Umekawa , Motoya Takewaki
CPC分类号： G01K1/08 , G01K1/14 , G01K7/02 , H01L21/22 , H01L21/324 , H01L21/67098 , H01L21/67248 , H01L22/12
摘要： A thermocouple includes: a temperature measuring portion configured to measure an internal temperature of a reaction tube; a main body portion provided therein with a wire which constitutes the temperature measuring portion; and a cushioning portion attached to the main body portion at least in the vicinity of the temperature measuring portion, wherein the thermocouple is fixed to an outer surface of the reaction tube in a state in which the thermocouple makes contact with the reaction tube through the cushioning portion.
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9.发明授权公开(公告)号：US12040179B2
公开(公告)日：2024-07-16
申请号：US15073084
申请日：2016-03-17
发明人： Takaaki Noda , Kotaro Konno , Shingo Nohara , Takeo Hanashima
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , H01J37/32
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/45534 , C23C16/45542 , H01J37/32091 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02277 , H01L21/0228
摘要： A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.
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公开(公告)号：US12037677B2
公开(公告)日：2024-07-16
申请号：US17204493
申请日：2021-03-17
发明人： Ryuji Yamamoto , Yoshiro Hirose
IPC分类号： C23C16/455 , C23C16/02 , C23C16/24 , H01L21/02
CPC分类号： C23C16/02 , C23C16/24 , C23C16/45542 , C23C16/45546 , C23C16/45557 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262
摘要： A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.
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