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1.发明授权公开(公告)号：US11538688B2
公开(公告)日：2022-12-27
申请号：US16800744
申请日：2020-02-25
发明人： Arito Ogawa , Atsuro Seino
IPC分类号： H01L21/285 , C23C16/34 , C23C16/52 , H01L21/768 , C23C16/455 , C23C16/458 , C23C16/44 , H01L21/28 , H01L21/02
摘要： There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.
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公开(公告)号：US12084757B2
公开(公告)日：2024-09-10
申请号：US17891449
申请日：2022-08-19
发明人： Arito Ogawa , Atsuro Seino
IPC分类号： C23C16/02 , C23C16/18 , C23C16/455 , H01L21/285
CPC分类号： C23C16/0281 , C23C16/18 , C23C16/45527 , C23C16/45553 , H01L21/28556 , H01L21/28568
摘要： There are included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
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公开(公告)号：US20240332024A1
公开(公告)日：2024-10-03
申请号：US18599877
申请日：2024-03-08
发明人： Yutaka MATSUNO , Atsuro Seino , Arito Ogawa
IPC分类号： H01L21/285 , H01L21/02 , H01L21/67
CPC分类号： H01L21/28556 , H01L21/0228 , H01L21/67017 , H01L21/67207
摘要： A technique includes forming a film containing a first element and a second element different from the first element on the substrate by performing a process a predetermined number of times, the process including: (a) supplying a first gas containing the first element and a halogen element to the substrate; (b) supplying a second gas containing the second element to the substrate; (c) supplying a third gas containing a third element and having a reducing character to the substrate; and (d) supplying a fourth gas containing a fourth element and having a reducing character to the substrate, wherein (a) and (d) are performed consecutively, and (b) and (c) are performed consecutively.
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4.发明授权公开(公告)号：US11915938B2
公开(公告)日：2024-02-27
申请号：US18085970
申请日：2022-12-21
发明人： Arito Ogawa , Atsuro Seino
IPC分类号： H01L21/285 , C23C16/34 , C23C16/52 , H01L21/768 , C23C16/455 , C23C16/458 , H01L21/28 , H01L21/02 , C23C16/44
CPC分类号： H01L21/28568 , C23C16/34 , C23C16/52
摘要： There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by setting an internal pressure of the process chamber to a value which falls within a range of 130 Pa to less than 3,990 Pa during at least the supply of the reducing gas, wherein (a) includes a timing of simultaneously supplying the metal-containing gas and the reducing gas; (b) removing the metal-containing gas and the reducing gas that remain in the process chamber; (c) supplying a nitrogen-containing gas to the substrate; and (d) removing the nitrogen-containing gas remaining in the process chamber.
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公开(公告)号：US11424127B2
公开(公告)日：2022-08-23
申请号：US17476197
申请日：2021-09-15
发明人： Arito Ogawa , Atsuro Seino
IPC分类号： H01L21/285 , C23C16/18 , C23C16/455
摘要： There is included (a) supplying a gas containing an organic ligand to a substrate; (b) supplying a metal-containing gas to the substrate; and (c) supplying a first reducing gas to the substrate, wherein after (a), a metal-containing film is formed on the substrate by performing (b) and (c) one or more times, respectively.
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公开(公告)号：US12084760B2
公开(公告)日：2024-09-10
申请号：US18163580
申请日：2023-02-02
发明人： Takuya Joda , Arito Ogawa , Atsuro Seino
IPC分类号： C23C16/30 , C23C16/44 , C23C16/455 , C23C16/52
CPC分类号： C23C16/303 , C23C16/4408 , C23C16/4412 , C23C16/45544 , C23C16/45553 , C23C16/52
摘要： There is provided a technique that includes: (a) loading a substrate into a process container; (b) processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate; (c) unloading the processed substrate from the process container; and (d) supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container.
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7.发明授权公开(公告)号：US11967500B2
公开(公告)日：2024-04-23
申请号：US16918495
申请日：2020-07-01
发明人： Arito Ogawa , Atsuro Seino
IPC分类号： H01L21/02 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/455 , C23C16/52 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/02153 , C23C16/32 , C23C16/325 , C23C16/34 , C23C16/345 , C23C16/347 , C23C16/36 , C23C16/45531 , C23C16/45546 , C23C16/45551 , C23C16/52 , H01L21/02208 , H01L21/28562 , H01L21/32051 , H01L21/76829 , H01L21/76843
摘要： There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
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公开(公告)号：US20230238244A1
公开(公告)日：2023-07-27
申请号：US18194026
申请日：2023-03-31
发明人： Koei KURIBAYASHI , Arito Ogawa , Atsuro Seino
IPC分类号： H01L21/285 , C23C16/455 , C23C16/14 , H01L21/3205 , H01L21/67
CPC分类号： H01L21/28556 , C23C16/14 , C23C16/45523 , H01L21/28568 , H01L21/32051 , H01L21/67207
摘要： There is provided a technique that includes: (a) supplying a molybdenumcontaining gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.
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9.发明授权公开(公告)号：US11621169B2
公开(公告)日：2023-04-04
申请号：US17159252
申请日：2021-01-27
发明人： Koei Kuribayashi , Arito Ogawa , Atsuro Seino
IPC分类号： H01L21/285 , H01L21/3205 , H01L21/02 , H01L21/67 , C23C16/14 , C23C16/455 , C23C16/40
摘要： There is provided a technique that includes: (a) supplying a molybdenum-containing gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.
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10.发明授权公开(公告)号：US10734218B2
公开(公告)日：2020-08-04
申请号：US16133773
申请日：2018-09-18
发明人： Arito Ogawa , Atsuro Seino
IPC分类号： H01L21/02 , C23C16/36 , C23C16/455 , C23C16/34 , H01L21/768 , H01L21/3205 , H01L21/285 , C23C16/32 , C23C16/52
摘要： There is provided a process of forming a film containing a metal element, an additional element different from the metal element and at least one of nitrogen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor gas containing the metal element and a second precursor gas containing the additional element to the substrate so that supply periods of the first precursor gas and the second precursor gas at least partially overlap with each other; and (b) supplying a reaction gas containing the at least one of nitrogen and carbon to the substrate.
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