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公开(公告)号：US20230383411A1
公开(公告)日：2023-11-30
申请号：US18449750
申请日：2023-08-15
发明人： Masashi SUGISHITA , Masaaki UENO
CPC分类号： C23C16/52 , C23C16/466 , H01L21/31 , H01L21/02 , H01L21/67017 , H01L21/67109 , H01L21/67248
摘要： According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.
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公开(公告)号：US20190276938A1
公开(公告)日：2019-09-12
申请号：US16425652
申请日：2019-05-29
发明人： Masashi SUGISHITA , Masaaki UENO
摘要： According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.
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公开(公告)号：US20240309509A1
公开(公告)日：2024-09-19
申请号：US18588105
申请日：2024-02-27
IPC分类号： C23C16/46 , C23C16/458
CPC分类号： C23C16/466 , C23C16/4585
摘要： There is provided a technique that includes: transferring a substrate from a process chamber to a transfer chamber, after processing the substrate disposed at the process chamber while detecting a temperature by a temperature sensor installed at a substrate support configured to support the substrate; and cooling the substrate so that the temperature detected by the temperature sensor becomes equal to or lower than a set temperature while the substrate support is located at a predetermined position.
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公开(公告)号：US20230221700A1
公开(公告)日：2023-07-13
申请号：US18180615
申请日：2023-03-08
IPC分类号： G05B19/4099 , H01L21/67
CPC分类号： G05B19/4099 , H01L21/67098 , G05B2219/45031
摘要： According to one aspect of the technique of the present disclosure, there is provided a temperature control method including: (a) controlling a current heater supply power such that a predicted temperature column calculated according to a prediction model stored in advance approaches a future target temperature column, wherein the future target temperature column is updated in accordance with a current temperature, a final target temperature and one of a temperature convergence ramp rate and a designated temperature convergence time.
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公开(公告)号：US20210313205A1
公开(公告)日：2021-10-07
申请号：US17349600
申请日：2021-06-16
发明人： Shinobu SUGIURA , Masaaki UENO , Tetsuya KOSUGI , Hitoshi MURATA , Masashi SUGISHITA , Tomoyuki YAMADA
IPC分类号： H01L21/67 , G05D23/19 , H01L21/673 , H01L21/324 , H01L21/66
摘要： According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.
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6.发明申请公开(公告)号：US20200333766A1
公开(公告)日：2020-10-22
申请号：US16921652
申请日：2020-07-06
发明人： Masashi SUGISHITA , Yuuji URANO , Kiyohiko MAEDA , Masaaki UENO , Tetsuya KOSUGI , Masaya NISHIDA
IPC分类号： G05B19/418 , C23C16/52 , C23C16/44 , H01L21/67
摘要： The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.
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公开(公告)号：US20190267267A1
公开(公告)日：2019-08-29
申请号：US16283418
申请日：2019-02-22
摘要： There is provided a technique that includes (a) acquiring temperature data of at least one of a heater temperature defined by a temperature of a heater and a furnace temperature defined by an inner temperature of a process chamber, and acquiring a power supply value indicating an electric power supplied to the heater; (b) acquiring a reference temperature of the temperature data; (c) creating a predetermined equation using a prediction model of estimating a predicted temperature of the temperature data; (d) calculating a solution of minimizing a deviation between the reference temperature and the predicted temperature based on the predetermined equation; and (e) outputting a calculated power supply value calculated from the solution, and processing a substrate while controlling heating of the heater based on the calculated power supply value.
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