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1.发明申请公开(公告)号：US20220122859A1
公开(公告)日：2022-04-21
申请号：US17563475
申请日：2021-12-28
发明人： Hitoshi MURATA , Yasuo KUNII , Masaaki UENO , Masahiro SUEMITSU
IPC分类号： H01L21/67 , H01L21/324
摘要： There is provided a technique that includes a quartz container in which an object to be processed, which contains a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the quartz container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the quartz container by heating from the heater such that the radiant wave reaches the object to be processed in the quartz container.
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2.发明申请公开(公告)号：US20200173024A1
公开(公告)日：2020-06-04
申请号：US16787988
申请日：2020-02-11
IPC分类号： C23C16/46 , H01L21/673 , H01L21/67 , H01L21/02 , H01L21/31
摘要： Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.
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公开(公告)号：US20240234187A1
公开(公告)日：2024-07-11
申请号：US18611232
申请日：2024-03-20
发明人： Hitoshi MURATA , Takayuki Nakada , Masaaki Ueno
IPC分类号： H01L21/67 , H01L21/66 , H01L21/673
CPC分类号： H01L21/67248 , H01L21/6732 , H01L22/12
摘要： Provided is a technique including a plurality of supports configured to support a substrate; at least one upright including a first space inside; and a temperature sensor provided in the first space, the temperature sensor including a temperature detector configured to measure a temperature of the substrate, in which at least one support of the plurality of supports includes a second space inside in communication with the first space to allow the temperature detector to be installed in the second space.
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公开(公告)号：US20210407865A1
公开(公告)日：2021-12-30
申请号：US17473664
申请日：2021-09-13
发明人： Kenji SHINOZAKI , Tetsuo YAMAMOTO , Yukitomo HIROCHI , Yoshihiko YANAGISAWA , Naoki HARA , Masaaki UENO , Hideto YAMAGUCHI , Hitoshi MURATA , Shuhei SAIDO , Kazuhiro KIMURA
摘要： According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.
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公开(公告)号：US20190284696A1
公开(公告)日：2019-09-19
申请号：US16427395
申请日：2019-05-31
发明人： Tetsuya KOSUGI , Hitoshi MURATA , Shuhei SAIDO
摘要： According to the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube accommodating therein a plurality of substrates vertically arranged; and a first heater configured to heat an inside of the reaction tube from an upper portion of the reaction tube, wherein a heat generating amount of the first heater in a region corresponding to a low temperature portion of an upper substrate among the plurality of the substrates accommodated in the reaction tube is greater than a heat generating amount of the first heater in a region corresponding to a high temperature portion of the upper substrate.
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公开(公告)号：US20240151591A1
公开(公告)日：2024-05-09
申请号：US18411949
申请日：2024-01-12
发明人： Tokunobu AKAO , Hitoshi MURATA , Akinori TANAKA , Masaaki UENO
CPC分类号： G01K1/146 , G01K1/143 , H01L21/67248 , H01L22/12
摘要： According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe provided to be accommodated in a recess formed at a portion of a substrate retainer on which the substrate is mounted.
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7.发明申请公开(公告)号：US20220122858A1
公开(公告)日：2022-04-21
申请号：US17563469
申请日：2021-12-28
发明人： Hitoshi MURATA , Yasuo KUNII , Masaaki UENO
IPC分类号： H01L21/67 , H01L21/673 , C23C16/46
摘要： There is provided a technique that includes a reaction container in which an object to be processed, containing a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the reaction container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the reaction container by selecting a wavelength of a radiation heat from the heater such that the radiant wave reaches the object to be processed in the reaction container.
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公开(公告)号：US20210313205A1
公开(公告)日：2021-10-07
申请号：US17349600
申请日：2021-06-16
发明人： Shinobu SUGIURA , Masaaki UENO , Tetsuya KOSUGI , Hitoshi MURATA , Masashi SUGISHITA , Tomoyuki YAMADA
IPC分类号： H01L21/67 , G05D23/19 , H01L21/673 , H01L21/324 , H01L21/66
摘要： According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.
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公开(公告)号：US20210181033A1
公开(公告)日：2021-06-17
申请号：US17185408
申请日：2021-02-25
发明人： Tokunobu AKAO , Hitoshi MURATA , Akinori TANAKA , Masaaki UENO
摘要： According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe passing through a notch provided at least in a bottom plate of a substrate retainer inserted into a process chamber in a state where the substrate is mounted on the substrate retainer.
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公开(公告)号：US20190080941A1
公开(公告)日：2019-03-14
申请号：US16127292
申请日：2018-09-11
发明人： Tetsuya KOSUGI , Hitoshi MURATA , Masaaki UENO
摘要： There is provided a cooling unit, comprising: an intake pipe provided for each of a plurality of zones and configured to supply a gas for cooling a reaction tube; a control valve provided in the intake pipe and configured to adjust a flow rate of the gas; a buffer part configured to temporarily store the gas supplied from the intake pipe; and openings provided so as to blow the gas stored in the buffer part toward the reaction tube, wherein the flow rate of the gas introduced into the intake pipe is set according to vertical length ratios of the zones such that the flow rate and a flow velocity of the gas injected from the openings toward the reaction tube are adjusted by opening and closing the control valve.
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