公开(公告)号：US20230005760A1

公开(公告)日：2023-01-05

申请号：US17939578

申请日：2022-09-07

Applicant: Kokusai Electric Corporation

Inventor： Yusaku OKAJIMA ,  Takatomo YAMAGUCHI ,  Yunosuke SAKAI ,  Yoshinori IMAI

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/44 ,  C23C16/34

Abstract: According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an inner tube provided with a substrate accommodating region in which substrates are accommodated along an arrangement direction; an outer tube provided outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at a lower end portion of the outer tube; and a gas guide for controlling a flow of gas in an annular space between the inner tube and the outer tube and including a first fin near a lowermost first exhaust port among the first exhaust ports that is closest to the second exhaust port in a space between the lowermost first exhaust port and the second exhaust port.

公开(公告)号：US20230230861A1

公开(公告)日：2023-07-20

申请号：US18189472

申请日：2023-03-24

Applicant: Kokusai Electric Corporation

Inventor： Takefumi MORI ,  Yuji TAKEBAYASHI ,  Makoto HIRANO ,  Takatomo YAMAGUCHI ,  Yusaku OKAJIMA

IPC: H01L21/67 ,  C23C16/44 ,  H01L21/677

CPC classification number: H01L21/67196 ,  C23C16/4412 ,  H01L21/6719 ,  H01L21/6776

Abstract: A substrate processing technique including: a module including a gas supplier having an upstream side gas guide and a supply structure, a reaction tube communicating with the gas supplier, and a gas exhauster; a supply pipe connected to the gas supplier, and an exhaust pipe connected to the gas exhauster; a carry chamber adjacent to a plurality of the modules; and a piping arrangement region in which the supply pipe or the exhaust pipe can be arranged, in which the reaction tube is disposed at a position overlapping the carry chamber, when the supply pipe is disposed in the piping arrangement region, the gas exhauster is disposed at a position oblique to the shaft and not overlapping the carry chamber, and when the exhaust pipe is disposed in the piping arrangement area, the gas supplier is disposed at a position oblique to the shaft and not overlapping the carry chamber.

公开(公告)号：US20230407479A1

公开(公告)日：2023-12-21

申请号：US18458491

申请日：2023-08-30

Applicant: Kokusai Electric Corporation

Inventor： Yusaku OKAJIMA ,  Takatomo YAMAGUCHI

IPC: C23C16/458

CPC classification number: C23C16/4586

Abstract: There is provided a technique including: a substrate support including a plurality of first props capable of supporting a plurality of substrates at intervals in an up-down direction; and a partition support including a plurality of partitions and a plurality of second props, the plurality of partitions each having a cut-away portion at which the plurality of first props is disposed, the plurality of partitions being disposed one-to-one in spaces between the plurality of substrates held by the substrate support, the plurality of second props supporting the plurality of partitions.

公开(公告)号：US20190035654A1

公开(公告)日：2019-01-31

申请号：US16138383

申请日：2018-09-21

Applicant: Kokusai Electric Corporation

Inventor： Shuhei SAIDO ,  Hidenari YOSHIDA ,  Takatomo YAMAGUCHI ,  Takayuki NAKADA ,  Tomoshi TANIYAMA

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

公开(公告)号：US20240186156A1

公开(公告)日：2024-06-06

申请号：US18436677

申请日：2024-02-08

Applicant: Kokusai Electric Corporation

Inventor： Kenji ONO ,  Yusaku OKAJIMA ,  Takatomo YAMAGUCHI ,  Hideto TATENO ,  Yuji TAKEBAYASHI

IPC: H01L21/67 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01L21/67109 ,  C23C16/345 ,  C23C16/45557 ,  C23C16/4583 ,  C23C16/52 ,  H01L21/0217

Abstract: A substrate processing apparatus, together with related techniques, is provided that includes: a reaction tube provided with a protrusion, wherein a substrate is processed in the reaction tube; a first heater configured to heat the reaction tube; a second heater configured to heat the protrusion; and a heat insulator provided at the protrusion.

公开(公告)号：US20230012668A1

公开(公告)日：2023-01-19

申请号：US17951059

申请日：2022-09-22

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yusaku OKAJIMA ,  Takatomo YAMAGUCHI ,  Yunosuke SAKAI ,  Yoshinori IMAI

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/458 ,  C23C16/44 ,  C23C16/34

Abstract: There is provided a substrate processing apparatus including: an inner tube including a substrate accommodating region where substrates are accommodated along an arrangement direction; an outer tube outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at an end portion of the outer tube along the arrangement direction; and a gas guide controlling gas flow in an annular space between the inner and outer tubes. A first exhaust port A is located farthest from the second exhaust port, and faces a gas supply port A. The gas guide includes a fin provided near the gas supply port A and surrounds at least a part of an outer periphery of the gas supply port A.

公开(公告)号：US20220005717A1

公开(公告)日：2022-01-06

申请号：US17476151

申请日：2021-09-15

Applicant: Kokusai Electric Corporation

Inventor： Takatomo YAMAGUCHI ,  Hidenari YOSHIDA ,  Kenji ONO

IPC: H01L21/677 ,  H01L21/324

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate retainer in a reaction chamber, wherein the substrate retainer is provided with a plurality of slots capable of accommodating a plurality of substrates in a multistage manner; (b) repeatedly performing a set including: (b-1) moving the substrate retainer so as to locate one or more of the slots outside the reaction chamber; and (b-2) charging one or more of the substrates into the one or more of the slots; and (c) moving the substrate retainer such that the plurality of substrates charged in the plurality of slots are accommodated in the reaction chamber.

公开(公告)号：US20190255576A1

公开(公告)日：2019-08-22

申请号：US16280874

申请日：2019-02-20

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Koei KURIBAYASHI ,  Kenji KAMEDA ,  Tsukasa KAMAKURA ,  Takeo HANASHIMA ,  Hiroaki HIRAMATSU ,  Shinya EBATA ,  Hiroto YAMAGISHI ,  Sadao HISAKADO ,  Takafumi SASAKI ,  Takatomo YAMAGUCHI ,  Shuhei SAIDO

IPC: B08B5/00 ,  C23C16/56 ,  C23C16/34 ,  H01L21/02

Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

公开(公告)号：US20220356580A1

公开(公告)日：2022-11-10

申请号：US17870468

申请日：2022-07-21

Applicant: Kokusai Electric Corporation

Inventor： Yusaku OKAJIMA ,  Takatomo YAMAGUCHI

IPC: C23C16/455 ,  H01L21/67

Abstract: According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a reaction tube in which the substrate support is accommodated; a heater provided around the reaction tube; and an accommodation structure provided at a side surface of the reaction tube and configured to accommodate one or both of: a gas supply nozzle provided so as to extend from an outside of the reaction tube toward an inside of the reaction tube in a horizontal direction with respect to a surface of the substrate supported by the substrate support; and a first temperature measuring structure provided so as to extend from the outside of the reaction tube toward the inside of the reaction tube in the horizontal direction with respect to the surface of the substrate supported by the substrate support.

公开(公告)号：US20200173024A1

公开(公告)日：2020-06-04

申请号：US16787988

申请日：2020-02-11

Applicant: Kokusai Electric Corporation

Inventor： Hitoshi MURATA ,  Takashi YAHATA ,  Yuichi WADA ,  Takatomo YAMAGUCHI ,  Shuhei SAIDO

IPC: C23C16/46 ,  H01L21/673 ,  H01L21/67 ,  H01L21/02 ,  H01L21/31

Abstract: Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; a upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and an heating element disposed inside the annular member.