-
1.发明申请公开(公告)号：US20220122859A1
公开(公告)日：2022-04-21
申请号：US17563475
申请日：2021-12-28
发明人： Hitoshi MURATA , Yasuo KUNII , Masaaki UENO , Masahiro SUEMITSU
IPC分类号： H01L21/67 , H01L21/324
摘要： There is provided a technique that includes a quartz container in which an object to be processed, which contains a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the quartz container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the quartz container by heating from the heater such that the radiant wave reaches the object to be processed in the quartz container.
-
公开(公告)号：US20230383411A1
公开(公告)日：2023-11-30
申请号：US18449750
申请日：2023-08-15
发明人： Masashi SUGISHITA , Masaaki UENO
CPC分类号： C23C16/52 , C23C16/466 , H01L21/31 , H01L21/02 , H01L21/67017 , H01L21/67109 , H01L21/67248
摘要： According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.
-
3.发明申请公开(公告)号：US20190355630A1
公开(公告)日：2019-11-21
申请号：US16531540
申请日：2019-08-05
发明人： Hideto YAMAGUCHI , Tetsuya KOSUGI , Masaaki UENO
摘要： A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.
-
公开(公告)号：US20190276938A1
公开(公告)日：2019-09-12
申请号：US16425652
申请日：2019-05-29
发明人： Masashi SUGISHITA , Masaaki UENO
摘要： According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.
-
公开(公告)号：US20210407865A1
公开(公告)日：2021-12-30
申请号：US17473664
申请日：2021-09-13
发明人： Kenji SHINOZAKI , Tetsuo YAMAMOTO , Yukitomo HIROCHI , Yoshihiko YANAGISAWA , Naoki HARA , Masaaki UENO , Hideto YAMAGUCHI , Hitoshi MURATA , Shuhei SAIDO , Kazuhiro KIMURA
摘要： According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.
-
6.发明申请公开(公告)号：US20200333766A1
公开(公告)日：2020-10-22
申请号：US16921652
申请日：2020-07-06
发明人： Masashi SUGISHITA , Yuuji URANO , Kiyohiko MAEDA , Masaaki UENO , Tetsuya KOSUGI , Masaya NISHIDA
IPC分类号： G05B19/418 , C23C16/52 , C23C16/44 , H01L21/67
摘要： The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.
-
公开(公告)号：US20240151591A1
公开(公告)日：2024-05-09
申请号：US18411949
申请日：2024-01-12
发明人： Tokunobu AKAO , Hitoshi MURATA , Akinori TANAKA , Masaaki UENO
CPC分类号： G01K1/146 , G01K1/143 , H01L21/67248 , H01L22/12
摘要： According to one aspect of the technique, there is provided a substrate temperature sensor configured to measure a temperature of a substrate, wherein the substrate temperature sensor is provided in a protective pipe provided to be accommodated in a recess formed at a portion of a substrate retainer on which the substrate is mounted.
-
公开(公告)号：US20230221700A1
公开(公告)日：2023-07-13
申请号：US18180615
申请日：2023-03-08
IPC分类号： G05B19/4099 , H01L21/67
CPC分类号： G05B19/4099 , H01L21/67098 , G05B2219/45031
摘要： According to one aspect of the technique of the present disclosure, there is provided a temperature control method including: (a) controlling a current heater supply power such that a predicted temperature column calculated according to a prediction model stored in advance approaches a future target temperature column, wherein the future target temperature column is updated in accordance with a current temperature, a final target temperature and one of a temperature convergence ramp rate and a designated temperature convergence time.
-
9.发明申请公开(公告)号：US20220122858A1
公开(公告)日：2022-04-21
申请号：US17563469
申请日：2021-12-28
发明人： Hitoshi MURATA , Yasuo KUNII , Masaaki UENO
IPC分类号： H01L21/67 , H01L21/673 , C23C16/46
摘要： There is provided a technique that includes a reaction container in which an object to be processed, containing a semiconductor, is arranged; a heater configured to emit heat; and a radiation control body arranged between the reaction container and the heater, wherein the radiation control body is configured to radiate a radiant wave of a wavelength transmittable through the reaction container by selecting a wavelength of a radiation heat from the heater such that the radiant wave reaches the object to be processed in the reaction container.
-
公开(公告)号：US20210313205A1
公开(公告)日：2021-10-07
申请号：US17349600
申请日：2021-06-16
发明人： Shinobu SUGIURA , Masaaki UENO , Tetsuya KOSUGI , Hitoshi MURATA , Masashi SUGISHITA , Tomoyuki YAMADA
IPC分类号： H01L21/67 , G05D23/19 , H01L21/673 , H01L21/324 , H01L21/66
摘要： According to one aspect of the technique, there is provided a configuration including: a furnace body covering a reaction chamber; a heating element divided into zones and provided in the furnace body; first temperature sensors provided for the zones such that its temperature measuring point is arranged near the heating element; second temperature sensors provided such that its temperature measuring point is provided close to a temperature measuring point of a first temperature sensor; and temperature meters provided at the zones to hold the temperature measuring points of the first and the second temperature sensors to be close to each other in a protection pipe. Each temperature meter penetrates an outer periphery of the furnace body perpendicular to a central axis of the reaction chamber such that a front end of the protection pipe is located outside the reaction tube and on a tube axis thereof.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.024 秒)
