- 专利标题: SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND THERMOCOUPLE SUPPORT
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申请号: US16531540申请日: 2019-08-05
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公开(公告)号: US20190355630A1公开(公告)日: 2019-11-21
- 发明人: Hideto YAMAGUCHI , Tetsuya KOSUGI , Masaaki UENO
- 申请人: KOKUSAI ELECTRIC CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: KOKUSAI ELECTRIC CORPORATION
- 当前专利权人: KOKUSAI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2012-210264 20120925
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; H01L21/67 ; G01K7/02
摘要:
A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.
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