- 专利标题: METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
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申请号: US18609345申请日: 2024-03-19
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公开(公告)号: US20240363334A1公开(公告)日: 2024-10-31
- 发明人: Keitaro HAMADA , Masaya NISHIDA
- 申请人: Kokusai Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Kokusai Electric Corporation
- 当前专利权人: Kokusai Electric Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP 23073800 2023.04.27
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23C16/34 ; C23C16/455 ; C23C16/52
摘要:
There is provided a technique that includes: (a) performing a cycle including supplying a source containing a predetermined element, carbon, and hydrogen to a substrate and supplying a first modifying agent containing nitrogen to the substrate, a predetermined number of times to form, on the substrate, a first film containing the predetermined element, nitrogen, carbon, and hydrogen bonded to carbon; and (b) supplying, to the substrate on which the first film is formed, a second modifying agent that is different from the first modifying agent and contains a compound containing a nitrogen-hydrogen bond and a nitrogen-nitrogen bond per molecule or a derivative of the compound, to modify the first film to a second film that is lower in content rate of the hydrogen bonded to carbon than the first film and contains the predetermined element, carbon, and nitrogen.
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