Delivering power to semiconductor loads

    公开(公告)号:US11336167B1

    公开(公告)日:2022-05-17

    申请号:US16833156

    申请日:2020-03-27

    Abstract: Encapsulated electronic modules having complex contact structures may be formed by encapsulating panels containing a substrate comprising pluralities of electronic modules delineated by cut lines and having conductive interconnects buried within terminal holes and other holes drilled in the panel within the boundaries of the cut lines. Slots may be cut in the panel along the cut lines. The interior of the holes, as well as surfaces within the slots and on the surfaces of the panel may be metallized, e.g. by a series of processes including plating. Solder may be dispensed into the holes for surface mounting. Two or more panels may be stacked prior to singulation to form module stacks.
    Delivering power vertically to semiconductor dies is described using multi-cell converters having a relatively large cell and output terminal pitch. Translation interconnections may be provided in a semiconductor package substrate, a system PCB, or in an interconnection module. The translation interconnections or interconnection module may provide vertical power delivery to semiconductor devices through a semiconductor power grid having a small pitch. The converters and interconnection modules may be fabricated in panels and stacked prior to singulation. Sintering techniques may be used to interconnect some or all of the functional layers of the stack.

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