公开(公告)号：US20240321629A1

公开(公告)日：2024-09-26

申请号：US18679546

申请日：2024-05-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Zhen Yu ,  Cheng-Chi Chuang ,  Chih-Hao Wang ,  Yu-Ming Lin ,  Lin-Yu Huang

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L21/76802 ,  H01L21/76831 ,  H01L23/5226 ,  H01L29/41775 ,  H01L29/66477

摘要： In some embodiments, the present disclosure relates to an integrated chip that includes a substrate, a first contact layer, and a gate electrode. The first contact layer overlies the substrate and the gate electrode overlies the substrate and is laterally spaced from the first contact layer. A first spacer structure surrounds outermost sidewalls of the first contact layer and separates the gate electrode from the first contact layer. A first hard mask structure is arranged over the first contact layer and is between portions of the first spacer structure. A first contact via extends through the first hard mask structure and contacts the first contact layer. A first liner layer is arranged directly between the first hard mask structure and the first spacer structure.

公开(公告)号：US20240266223A1

公开(公告)日：2024-08-08

申请号：US18439859

申请日：2024-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Huan-Chieh Su ,  Cheng-Chi Chuang ,  Chih-Hao Wang ,  Zhi-Chang Lin ,  Li-Zhen Yu

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823431 ,  H01L21/823412 ,  H01L29/6681 ,  H01L29/785 ,  H01L2029/7858

摘要： A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

公开(公告)号：US20240204046A1

公开(公告)日：2024-06-20

申请号：US18591290

申请日：2024-02-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shih-Chuan Chiu ,  Chia-Hao Chang ,  Cheng-Chi Chuang ,  Chih-Hao Wang ,  Huan-Chieh Su ,  Chun-Yuan Chen ,  Li-Zhen Yu ,  Yu-Ming Lin

IPC分类号： H01L29/06 ,  H01L21/8234 ,  H01L29/423

CPC分类号： H01L29/0673 ,  H01L21/823418 ,  H01L29/42392

摘要： A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

公开(公告)号：US11996461B2

公开(公告)日：2024-05-28

申请号：US18321620

申请日：2023-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Huan-Chieh Su ,  Chun-Yuan Chen ,  Lo-Heng Chang ,  Li-Zhen Yu ,  Lin-Yu Huang ,  Cheng-Chi Chuang ,  Chih-Hao Wang

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L21/823475 ,  H01L29/0665 ,  H01L29/42356 ,  H01L29/78696

摘要： Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.

公开(公告)号：US20240055501A1

公开(公告)日：2024-02-15

申请号：US17887487

申请日：2022-08-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pinyen Lin ,  Chung-Liang Cheng ,  Lin-Yu Huang ,  Li-Zhen Yu ,  Huang-Lin Chao

IPC分类号： H01L29/45 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/775 ,  H01L21/285 ,  H01L29/66

CPC分类号： H01L29/45 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/78696 ,  H01L29/775 ,  H01L21/28518 ,  H01L29/66742 ,  H01L29/66439

摘要： A semiconductor device and the manufacturing method thereof are described. The device includes semiconductor channel sheets, source and drain regions and a gate structure. The semiconductor channel sheets are arranged in parallel and spaced apart from one another. The source and drain regions are disposed beside the semiconductor channel sheets. The gate structure is disposed around and surrounding the semiconductor channel sheets. The silicide layer is disposed on the source region or the drain region. A contact structure is disposed on the silicide layer on the source region or the drain region. The contact structure includes a metal contact and a liner, and the silicide layer is in contact with the metal contact, and the liner is separate from the silicide layer by the metal contact.

公开(公告)号：US11658226B2

公开(公告)日：2023-05-23

申请号：US17228955

申请日：2021-04-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Huan-Chieh Su ,  Chun-Yuan Chen ,  Li-Zhen Yu ,  Lin-Yu Huang ,  Lo-Heng Chang ,  Cheng-Chi Chuang ,  Chih-Hao Wang

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L21/823475 ,  H01L29/0665 ,  H01L29/42356 ,  H01L29/78696

摘要： Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.

公开(公告)号：US20230050249A1

公开(公告)日：2023-02-16

申请号：US17729893

申请日：2022-04-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Lin-Yu HUANG ,  Li-Zhen Yu ,  Huan-Chieh Su ,  Cheng-Chi Chuang ,  Chih-Hao Wang

IPC分类号： H01L27/088 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/768

摘要： A semiconductor device includes a first gate structure and a second gate structure over a fin, a dielectric cut pattern sandwiched by the first and second gate structures, and a liner layer surrounding the dielectric cut pattern. The dielectric cut pattern is spaced apart from the fin and extends further from the substrate than a first gate electrode of the first gate structure and a second gate electrode of the second gate structure. The semiconductor device further includes a conductive feature sandwiched by the first and second gate structures. The conductive feature is divided by the conductive feature into a first segment and a second segment. The first segment of the conductive feature is above a source/drain region of the fin.

公开(公告)号：US12046507B2

公开(公告)日：2024-07-23

申请号：US17874639

申请日：2022-07-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Lin-Yu Huang ,  Li-Zhen Yu ,  Chia-Hao Chang ,  Cheng-Chi Chuang ,  Kuan-Lun Cheng ,  Chih-Hao Wang

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/7682 ,  H01L23/5329 ,  H01L21/76807 ,  H01L23/53238

摘要： A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a conductive structure disposed over the device, and the conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer including a third portion and a fourth portion, the third portion surrounds the first portion of the sidewall, and the fourth portion is disposed on the conductive structure. The semiconductor device structure further includes a first dielectric material surrounding the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. The first dielectric material includes a first material different than a second material of the first spacer layer, and the first dielectric material is substantially coplanar with the fourth portion of the first spacer layer.

公开(公告)号：US20230420455A1

公开(公告)日：2023-12-28

申请号：US17849725

申请日：2022-06-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Li-Zhen Yu ,  Huan-Chieh Su ,  Lin-Yu Huang ,  Chih-Hao Wang

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40 ,  H01L29/66 ,  H01L21/02 ,  H01L21/8234

CPC分类号： H01L27/088 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/78696 ,  H01L29/775 ,  H01L29/401 ,  H01L29/66545 ,  H01L29/66742 ,  H01L29/66439 ,  H01L21/02603 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823475 ,  H01L21/823481

摘要： A semiconductor device includes a plurality of stacks that each includes a plurality of nanostructures stacked over each other, a gate structure wrapping around the nanostructures and extending between the stacks, source and drain structures, and a plurality of fin structures respectively disposed on the stacks. A first surface of the gate structure between the stacks is substantially coplanar with first surfaces of the fin structures facing to the nanostructures or between the first surfaces of the fin structures and the nanostructures.

公开(公告)号：US20230299167A1

公开(公告)日：2023-09-21

申请号：US18321620

申请日：2023-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Huan-Chieh Su ,  Chun-Yuan Chen ,  Lo-Heng Chang ,  Li-Zhen Yu ,  Lin-Yu Huang ,  Cheng-Chi Chuang ,  Chih-Hao Wang

IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L29/0665 ,  H01L21/823475 ,  H01L29/78696 ,  H01L29/42356

摘要： Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to one embodiment includes first nanostructures, a first gate structure wrapping around each of the first nanostructures and disposed over an isolation structure, and a backside gate contact disposed below the first nanostructures and adjacent to the isolation structure. A bottom surface of the first gate structure is in direct contact with the backside gate contact.