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    Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
    3.
    发明授权
    Processing systems and platforms for roughness reduction of materials using illuminated etch solutions 有权

    公开(公告)号：US12112959B2

    公开(公告)日：2024-10-08

    申请号：US16402634

    申请日：2019-05-03

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet

    IPC: H01L21/67 ,  H01L21/3213

    CPC classification number: H01L21/6708 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/67069

    Abstract: Processing system and platform embodiments are described that illuminate etch solutions to provide controlled etching of materials. The processing systems and platforms deposit a liquid etch solution over a material to be etched and illuminate the liquid etch solution to adjust levels of reactants. The liquid etch solution has a first level of reactants, and the illumination causes the liquid etch solution to have a second level of reactants that is different than the first level. The material is modified with the illuminated etch solution, and the modified material is removed. The delivery, exposing, and removing can be repeated to provide a cyclic etch. Further, oxidation and dissolution can occur simultaneously or can occur in multiple steps. The material being etched can be a polycrystalline material, a polycrystalline metal, and/or other material. One liquid etch solution can include hydrogen peroxide that is illuminated to form hydroxyl radicals.

    Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)
    6.
    发明授权
    Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD) 有权

    公开(公告)号：US11691175B1

    公开(公告)日：2023-07-04

    申请号：US17866897

    申请日：2022-07-18

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet ,  Ornella Sathoud

    IPC: B32B38/04 ,  B05D1/00 ,  B05D5/12

    CPC classification number: B05D1/60 ,  B05D5/12 ,  B05D2202/00

    Abstract: The present disclosure provides embodiments of improved area-selective deposition (ASD) processes and methods for selectively depositing polymer films on a variety of different target material. More specifically, the present disclosure provides improved ASD processes and related methods that use a cyclic vapor deposition process, which sequentially exposes a surface of a substrate to a polymer precursor followed by an initiator to selectively deposit a polymer thin film on a target material exposed on the substrate surface. The process of sequentially exposing the substrate surface to the precursor and the initiator can be repeated for one or more cycles of the cyclic vapor deposition process until a predetermined thickness of the polymer thin film is selectively deposited on the target material. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the target material.

    Methods For Wet Atomic Layer Etching Of Copper
    7.
    发明公开
    Methods For Wet Atomic Layer Etching Of Copper 审中-公开

    公开(公告)号：US20230140900A1

    公开(公告)日：2023-05-11

    申请号：US17725072

    申请日：2022-04-20

    Applicant: Tokyo Electron Limited

    Inventor： Christopher Netzband ,  Paul Abel ,  Jacques Faguet ,  Arkalgud Sitaram

    IPC: C23F1/18

    CPC classification number: C23F1/18

    Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

    Roughness reduction methods for materials using illuminated etch solutions
    8.
    发明授权
    Roughness reduction methods for materials using illuminated etch solutions 有权

    公开(公告)号：US10896824B2

    公开(公告)日：2021-01-19

    申请号：US16287669

    申请日：2019-02-27

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet

    IPC: H01L21/3213 ,  B08B7/00 ,  B08B7/04 ,  B24B37/04 ,  C09G1/00 ,  C09G1/06 ,  C09G1/02 ,  C09K13/06 ,  B24B1/00 ,  C09G1/04 ,  H01L21/306 ,  C09K3/14

    Abstract: Methods are disclosed that illuminate etch solutions to provide controlled etching of materials. An etch solution (e.g., gaseous, liquid, or combination thereof) with a first level of reactants is applied to the surface of a material to be etched. The etch solution is illuminated to cause the etch solution to have a second level of reactants that is greater than the first level. The surface of the material is modified (e.g., oxidized) with the illuminated etch solution, and the modified layer of material is removed. The exposing and removing can be repeated or cycled to etch the material. Further, for oxidation/dissolution embodiments the oxidation and dissolution can occur simultaneously, and the oxidation rate can be greater than the dissolution rate. The material can be a polycrystalline material, a polycrystalline metal, and/or other material. One etch solution can include hydrogen peroxide that is illuminated to form hydroxyl radicals.

    METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD
    9.
    发明申请
    METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD 审中-公开
    用于控制电场的图案和结构形成的方法和装置

    公开(公告)号：US20150152556A1

    公开(公告)日：2015-06-04

    申请号：US14577013

    申请日：2014-12-19

    Applicant: Tokyo Electron Limited

    Inventor： Jozef Brcka ,  Eric M. Lee ,  Jacques Faguet ,  Hongyu Henry Yue

    IPC: C23C16/50 ,  C23C16/04 ,  C23C16/48

    CPC classification number: C23C16/50 ,  A61F2/00 ,  B03C5/005 ,  B03C5/026 ,  C12M3/00 ,  C12M21/08 ,  C12M33/00 ,  C23C16/04 ,  C23C16/48 ,  H01J37/32009 ,  H01J37/32697 ,  H01L21/02612 ,  H01L21/67011

    Abstract: A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

    Abstract translation: 处理方法和装置使用至少一个电场施加器（34），其被偏置以产生空间 - 时间电场，以影响处理介质（26），悬浮的纳米物体（28）或基板（30）在处理中相互作用 其中介质（26）或颗粒的偶极子性质在衬底（30）上构造结构。 该装置可以包括磁场，声场，光学力或其他生成装置。 处理可能影响基底（30）上的选择性局部层，或者可以控制层中的颗粒的取向，控制介电电泳颗粒或介质的移动，或引起不同性质的悬浮颗粒遵循处理介质（26）中的不同路径。 可以在衬底（30）上沉积或修饰一层。 此外，可以选择处理介质（26）和电偏压以在衬底（30）上制备用于将衬底（30）结合到第二衬底的至少一个层，或者以受控的方向沉积碳纳米管（CNT） 在基板上。

    Dynamically adjusted purge timing in wet atomic layer etching
    10.
    发明授权
    Dynamically adjusted purge timing in wet atomic layer etching 有权

    公开(公告)号：US11915941B2

    公开(公告)日：2024-02-27

    申请号：US17580936

    申请日：2022-01-21

    Applicant: Tokyo Electron Limited

    Inventor： Jacques Faguet ,  Tetsuya Sakazaki ,  Paul Abel

    IPC: H01L21/311 ,  H01L21/67

    CPC classification number: H01L21/31116 ,  H01L21/67075

    Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.

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