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    Method for etching copper layer
    4.
    发明授权
    Method for etching copper layer 有权

    公开(公告)号：US10825688B2

    公开(公告)日：2020-11-03

    申请号：US16308428

    申请日：2017-06-07

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shigeru Tahara ,  Daisuke Urayama ,  Kenji Matsumoto ,  Hidenori Miyoshi

    IPC: H01L21/3065 ,  C23F4/00 ,  H01L21/3213 ,  H01L23/532 ,  H05H1/46

    Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

    Plasma etching apparatus and method
    5.
    发明授权
    Plasma etching apparatus and method 有权

    公开(公告)号：US10229815B2

    公开(公告)日：2019-03-12

    申请号：US14489125

    申请日：2014-09-17

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Akira Koshiishi ,  Noriyuki Kobayashi ,  Shigeru Yoneda ,  Kenichi Hanawa ,  Shigeru Tahara ,  Masaru Sugimoto

    IPC: H01J37/32 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3065

    Abstract: A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

    Etching Method Using Block-Copolymers
    6.
    发明申请
    Etching Method Using Block-Copolymers 有权
    使用嵌段共聚物的蚀刻方法

    公开(公告)号：US20140131839A1

    公开(公告)日：2014-05-15

    申请号：US14074460

    申请日：2013-11-07

    Applicant: Tokyo Electron Limited ,  IMEC

    Inventor： Boon Teik Chan ,  Shigeru Tahara

    IPC: H01L21/3065 ,  H01L27/04

    CPC classification number: H01L21/3086 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3088 ,  H01L27/04 ,  H01L51/0014 ,  H01L51/0017

    Abstract: A method for lithography is disclosed. The method includes obtaining a self-organizing block-copolymer layer on a neutral layer overlying a substrate, the self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, the self-organizing block-copolymer layer furthermore comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components. Further, the method includes etching selectively a first polymer component of the self-organizing block-copolymer layer, thereby remaining a second polymer component. Still further, the method includes applying a plasma etching to the neutral layer using the second polymer component as a mask, wherein the plasma etching comprises an inert gas and H2.

    Abstract translation: 公开了一种用于光刻的方法。 该方法包括在覆盖衬底的中性层上获得自组织嵌段共聚物层，所述自组织嵌段共聚物层包含至少两个具有相互不同的抗蚀剂电阻的聚合物组分，所述自组织嵌段共聚物层还包含 通过所述至少两种聚合物组分的微相分离形成的共聚物图案结构。 此外，该方法包括选择性地蚀刻自组织嵌段共聚物层的第一聚合物组分，由此保留第二聚合物组分。 此外，该方法包括使用第二聚合物组分作为掩模将等离子体蚀刻施加到中性层，其中等离子体蚀刻包括惰性气体和H 2。

    Etching of Block-Copolymers
    7.
    发明申请
    Etching of Block-Copolymers 有权
    嵌段共聚物的蚀刻

    公开(公告)号：US20140091435A1

    公开(公告)日：2014-04-03

    申请号：US14038565

    申请日：2013-09-26

    Applicant: Tokyo Electron Limited ,  IMEC

    Inventor： Boon Teik Chan ,  Shigeru Tahara

    IPC: H01L21/027

    CPC classification number: H01L21/0271 ,  B81C1/00031 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/31138

    Abstract: The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two polymer components having mutually different etching resistances, and the steps of applying at least once each of first plasma etching (14) of said self-organizing block-copolymer layer using a plasma formed from a substantially ashing gas, and second plasma etching (16) of said self-organizing block-copolymer layer using plasma formed from a pure inert gas or mixture of inert gases in order to selectively remove a first polymer phase. A corresponding intermediate product also is described.

    Abstract translation: 本发明涉及一种嵌段共聚物光刻法（10）。 该方法包括获得（12）包含至少两个具有相互不同的抗蚀性的聚合物组分的自组织嵌段共聚物层的步骤，以及施加至少一次所述自组装嵌段共聚物的第一等离子体蚀刻（14） 使用由基本灰分气体形成的等离子体组织嵌段共聚物层，以及使用由纯惰性气体或惰性气体混合物形成的等离子体进行第二等离子体蚀刻（16）所述自组织嵌段共聚物层，以选择性地除去 第一聚合物相。 还描述了相应的中间产物。

    Etching method
    9.
    发明授权
    Etching method 有权

    公开(公告)号：US10770308B2

    公开(公告)日：2020-09-08

    申请号：US16360469

    申请日：2019-03-21

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shigeru Tahara ,  Nobuaki Seki ,  Takahiko Kato

    IPC: H01L21/3213 ,  H01L21/321 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23F4/00 ,  H01L21/3065

    Abstract: A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.

    Method and system for performing post-etch annealing of a workpiece
    10.
    发明授权
    Method and system for performing post-etch annealing of a workpiece 有权

    公开(公告)号：US10319905B2

    公开(公告)日：2019-06-11

    申请号：US14594378

    申请日：2015-01-12

    Applicant: Tokyo Electron Limited

    Inventor： David F. Hurley ,  Doni Parnell ,  Shigeru Tahara ,  Toru Ishii

    IPC: H01L43/12

    Abstract: A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (CD), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. Thereafter, the patterned layer containing magnetic material on the one or more workpieces is annealed in the annealing system via an anneal process condition, wherein the anneal process condition is selected to adjust a property of the patterned layer containing magnetic material.

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