公开(公告)号：US11120999B2

公开(公告)日：2021-09-14

申请号：US16770084

申请日：2018-12-11

Applicant: TOKYO ELECTRON LIMITED ,  UNIVERSITE D'ORLEANS

Inventor： Koichi Yatsuda ,  Kaoru Maekawa ,  Nagisa Sato ,  Kumiko Ono ,  Shigeru Tahara ,  Jacques Faguet ,  Remi Dussart ,  Thomas Tillocher ,  Philippe Lefaucheux ,  Gaëlle Antoun

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

公开(公告)号：US20220199418A1

公开(公告)日：2022-06-23

申请号：US17521958

申请日：2021-11-09

Applicant: Tokyo Electron Limited ,  Université d'Orléans

Inventor： Du Zhang ,  Hojin Kim ,  Shigeru Tahara ,  Kaoru Maekawa ,  Mingmei Wang ,  Jacques Faguet ,  Remi Dussart ,  Thomas Tillocher ,  Philippe Lefaucheux ,  Gaëlle Antoun

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

公开(公告)号：US12131914B2

公开(公告)日：2024-10-29

申请号：US17521958

申请日：2021-11-09

Applicant: Tokyo Electron Limited ,  Université d'Orléans

Inventor： Du Zhang ,  Hojin Kim ,  Shigeru Tahara ,  Kaoru Maekawa ,  Mingmei Wang ,  Jacques Faguet ,  Remi Dussart ,  Thomas Tillocher ,  Philippe Lefaucheux ,  Gaëlle Antoun

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.