-
公开(公告)号：US11120999B2
公开(公告)日：2021-09-14
申请号：US16770084
申请日：2018-12-11
Applicant: TOKYO ELECTRON LIMITED , UNIVERSITE D'ORLEANS
Inventor： Koichi Yatsuda , Kaoru Maekawa , Nagisa Sato , Kumiko Ono , Shigeru Tahara , Jacques Faguet , Remi Dussart , Thomas Tillocher , Philippe Lefaucheux , Gaëlle Antoun
IPC: H01L21/311 , H01L21/3065 , H01J37/32
Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.
-
公开(公告)号：US10480978B2
公开(公告)日：2019-11-19
申请号：US15938916
申请日：2018-03-28
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kumiko Ono , Hiroshi Tsujimoto
IPC: G06F19/00 , G01F1/86 , H01L21/67 , G05D7/06 , H01L21/683 , H01J37/32 , G03F7/16 , G03F7/20 , G03F7/09
Abstract: A method according to an aspect includes outputting gas continuously from a flow rate controller, closing a valve, obtaining a first pressure rise characteristic, outputting the gas intermittently from the flow rate controller, closing the valve, obtaining a second pressure rise characteristic, obtaining a third pressure rise characteristic, obtaining a fourth pressure rise characteristic, obtaining a first required time required from the third pressure rise characteristic, obtaining a second required time from the fourth pressure rise characteristic, obtaining an estimated time until a predetermined pressure is reached, in a case where the intermittent output of the gas is performed assuming that there is no delay time, and obtaining a parameter representing a difference between the estimated time and the second required time.
-
公开(公告)号：US10269539B2
公开(公告)日：2019-04-23
申请号：US15938006
申请日：2018-03-28
Applicant: Tokyo Electron Limited
Inventor： Kumiko Ono , Hiroshi Tsujimoto , Koichi Nagami
IPC: H01J37/32
Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.
-
公开(公告)号：US20180218882A1
公开(公告)日：2018-08-02
申请号：US15938006
申请日：2018-03-28
Applicant: Tokyo Electron Limited
Inventor： Kumiko Ono , Hiroshi Tsujimoto , Koichi Nagami
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32577
Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.
-
Patent Agency Ranking
公开(公告)号：US10204763B2
公开(公告)日：2019-02-12
申请号：US14751655
申请日：2015-06-26
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takao Funakubo , Hirofumi Haga , Shinichi Kozuka , Wataru Ozawa , Akihiro Sakamoto , Naoki Taniguchi , Hiroshi Tsujimoto , Kumiko Ono
IPC: H01J37/32
Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.
-
公开(公告)号：US09904299B2
公开(公告)日：2018-02-27
申请号：US15080692
申请日：2016-03-25
Applicant: Tokyo Electron Limited
Inventor： Kumiko Ono , Hiroshi Tsujimoto , Atsushi Sawachi , Norihiko Amikura , Norikazu Sasaki , Yoshitaka Kawaguchi
CPC classification number: G05D7/0647
Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2≧9.
-
公开(公告)号：US20170278675A1
公开(公告)日：2017-09-28
申请号：US15464503
申请日：2017-03-21
Applicant: Tokyo Electron Limited
Inventor： Kumiko Ono , Hiroshi Tsujimoto , Koichi Nagami
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32577
Abstract: In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.
-
公开(公告)号：US10861675B2
公开(公告)日：2020-12-08
申请号：US16239756
申请日：2019-01-04
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takao Funakubo , Hirofumi Haga , Shinichi Kozuka , Wataru Ozawa , Akihiro Sakamoto , Naoki Taniguchi , Hiroshi Tsujimoto , Kumiko Ono
IPC: H01J37/32
Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.
-
公开(公告)号：US09960016B2
公开(公告)日：2018-05-01
申请号：US15464503
申请日：2017-03-21
Applicant: Tokyo Electron Limited
Inventor： Kumiko Ono , Hiroshi Tsujimoto , Koichi Nagami
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32183 , H01J37/32449 , H01J37/32577
Abstract: In a plasma processing method in which multiple cycles, each of which includes a first stage of generating plasma of a first processing gas containing a first gas and a second stage of generating plasma of a second processing gas containing the first gas and a second gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first gas and the second gas in the second stage is specified from a function or a table. The output of the second gas is begun prior to the start time point of the second stage by a time difference set based on the delay time.
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.019 seconds)
