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公开(公告)号：US20160020186A1
公开(公告)日：2016-01-21
申请号：US14863942
申请日：2015-09-24
Inventor： Yu-Feng CHEN , Chun-Hung LIN , Han-Ping PU , Chih-Hang TUNG , Kai-Chiang WU , Ming-Che HO
IPC: H01L23/00
CPC classification number: H01L24/13 , H01L23/488 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05027 , H01L2224/05111 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05551 , H01L2224/05555 , H01L2224/05572 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10125 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13012 , H01L2224/13076 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16237 , H01L2224/16238 , H01L2224/81191 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
Abstract: A semiconductor device includes an under-bump metallization (UBM) layer over a substrate. The semiconductor device also includes a copper-containing layer having a base portion over the UBM layer. The semiconductor device further includes a solder bump over the UBM layer and over the copper-containing layer. The base portion is embedded in the solder bump. The copper-containing layer has a cylindrical shape and includes at least two segments separated by at least two openings. A first total area (A) of the at least two openings is greater than about 3% of a second total area (B) of the at least two segments. The first total area (A) is less than about 70% of the second total area (B) of the at least two segments.
Abstract translation: 半导体器件包括在衬底上的凸起下金属化（UBM）层。 半导体器件还包括在UBM层上具有基底部分的含铜层。 半导体器件还包括在UBM层上方并且在含铜层上方的焊料凸块。 基部嵌入焊料凸块中。 含铜层具有圆筒形状，并且包括至少两个由至少两个开口分开的段。 所述至少两个开口的第一总面积（A）大于所述至少两个区段的第二总面积（B）的约3％。 第一总面积（A）小于至少两段的第二总面积（B）的约70％。
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公开(公告)号：US20150325539A1
公开(公告)日：2015-11-12
申请号：US14806728
申请日：2015-07-23
Inventor： Yi-Wen WU , Zheng-Yi LIM , Ming-Che HO , Chung-Shi LIU
CPC classification number: H01L23/291 , H01L23/293 , H01L23/3171 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02313 , H01L2224/02331 , H01L2224/02381 , H01L2224/0239 , H01L2224/03424 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05111 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/05583 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/08503 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16237 , H01L2224/16503 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/2064 , H01L2924/00 , H01L2224/05552
Abstract: A method includes coating a passivation layer overlying a semiconductor substrate and forming an interconnect layer overlying the passivation layer. The interconnect layer includes a line region and a landing pad region. The method further includes forming a metallic layer including tin on a surface of the interconnect layer using an immersion process, forming a protective layer on the metallic layer, and exposing a portion of the metallic layer on the landing pad region of the interconnect layer through the protective layer.
Abstract translation: 一种方法包括涂覆覆盖半导体衬底的钝化层并形成覆盖钝化层的互连层。 互连层包括线区域和着陆焊盘区域。 所述方法还包括使用浸渍工艺在所述互连层的表面上形成包含锡的金属层，在所述金属层上形成保护层，以及通过所述互连层的所述接合焊盘区域上的所述金属层的一部分暴露 保护层。
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公开(公告)号：US20150194402A1
公开(公告)日：2015-07-09
申请号：US14662295
申请日：2015-03-19
Inventor： Chun-Lei HSU , Ming-Che HO , Ming-Da CHENG , Chung-Shi LIU
IPC: H01L23/00
CPC classification number: H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03424 , H01L2224/03464 , H01L2224/0347 , H01L2224/0401 , H01L2224/05559 , H01L2224/05571 , H01L2224/05572 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1148 , H01L2224/1161 , H01L2224/11616 , H01L2224/11831 , H01L2224/13005 , H01L2224/13022 , H01L2224/1308 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2924/00013 , H01L2924/0002 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/00014 , H01L2924/01014 , H01L2924/206 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
Abstract: A method of forming a semiconductor device includes forming an under-bump metallurgy (UBM) layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate, and forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer. A removal process is initiated on an upper surface of the encapsulating layer and a coplanar top surface of the bump layer to remove the upper surface of the encapsulating layer until a top portion of the bump layer protrudes from the encapsulating layer.
Abstract translation: 一种形成半导体器件的方法包括在半导体衬底上形成覆盖在封装层的开口内的金属焊盘区域的一部分上的凸块下金属（UBM）层，以及形成覆盖在UBM层上的凸块层，以填充 打开封装层。 在封装层的上表面和凸起层的共面顶表面上开始去除工艺，以去除封装层的上表面，直到凸起层的顶部从封装层突出。
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