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公开(公告)号：US20230307227A1
公开(公告)日：2023-09-28
申请号：US18189556
申请日：2023-03-24
发明人： Sunhye HWANG , Sung Gi KIM , Jihyun LEE , Yujin CHO , Seung SON , Gyun Sang LEE , Younjoung CHO , Byungkeun HWANG
IPC分类号： H01L21/02 , C23C16/455 , C23C16/44 , C23C16/40
CPC分类号： H01L21/02216 , C23C16/45553 , H01L21/02164 , C23C16/4408 , C23C16/401
摘要： Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.-
公开(公告)号：US20210343524A1
公开(公告)日：2021-11-04
申请号：US17376403
申请日：2021-07-15
发明人： Younsoo KIM , Haeryong KIM , Seungmin RYU , Sunmin MOON , Jeonggyu SONG , Changsu WOO , Kyooho JUNG , Younjoung CHO
IPC分类号： H01L21/02
摘要： A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.
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公开(公告)号：US20240067663A1
公开(公告)日：2024-02-29
申请号：US18231339
申请日：2023-08-08
发明人： Hyunwoo KIM , Kazuki HARANO , Kiyoshi MURATA , Haruyoshi SATO , Seungmin RYU , Gyuhee PARK , Younjoung CHO , Atsushi YAMASHITA
IPC分类号： C07F5/00 , C01F17/218 , H01L21/02
CPC分类号： C07F5/003 , C01F17/218 , H01L21/02192 , H01L21/02205 , H01L21/02271 , H01L21/0228 , C23C16/405
摘要： An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):
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公开(公告)号：US20230040334A1
公开(公告)日：2023-02-09
申请号：US17859214
申请日：2022-07-07
发明人： Hyunwoo KIM , Kazuki HARANO , Kiyoshi MURATA , Haruyoshi SATO , Younsoo KIM , Seungmin RYU , Atsushi YAMASHITA , Gyuhee PARK , Younjoung CHO
摘要： An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):
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公开(公告)号：US20210300955A1
公开(公告)日：2021-09-30
申请号：US17072096
申请日：2020-10-16
发明人： Gyuhee PARK , Younjoung CHO , Haruyoshi SATO , Kazuki HARANO , Hiroyuki UCHIUZOU
摘要： A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):
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6.发明公开公开(公告)号：US20240145303A1
公开(公告)日：2024-05-02
申请号：US18378369
申请日：2023-10-10
发明人： Sunhye HWANG , Hyeonggeun LIM , Byungkeun HWANG , Younjoung CHO
IPC分类号： H01L21/768 , H01L21/02 , H01L21/321
CPC分类号： H01L21/76883 , H01L21/02211 , H01L21/0228 , H01L21/321
摘要： A selective thin film formation method, comprising forming a structure on a substrate in which a first material film including silicon atoms and oxygen atoms and a second material film different from the first material film are exposed, selectively forming an inhibitor liner only on an exposed surface of the first material film among the first material film and the second material film by applying a compound represented by XmSi(NR1R2)n or (XaR3)mSi(NR1R2)n to the structure, and selectively forming a third material film only on the exposed surface of the second material film among the first material film and the second material film. X is a halogen atom, R1, R2, and R3 are each independently an alkyl group, an alkenyl group, an allyl group, or a heterocyclic group, a, m, and n are each independently an integer of 1 to 3, and m+n=4.
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公开(公告)号：US20230406822A1
公开(公告)日：2023-12-21
申请号：US18209583
申请日：2023-06-14
发明人： Sunhye HWANG , Sunggi KIM , Yeonghun KIM , Gyunsang LEE , Jihyun LEE , Gyuhee PARK , Seung SON , Younjoung CHO , Byungkeun HWANG
IPC分类号： C07D207/46 , C07D265/32 , C07D403/12 , H01L21/02
CPC分类号： C07D207/46 , C07D265/32 , C07D403/12 , H01L21/0214 , H01L21/02219 , H01L21/02216 , H01L21/0228
摘要： A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):
R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q, Chemical Formula (1)
wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.-
公开(公告)号：US20210388010A1
公开(公告)日：2021-12-16
申请号：US17346400
申请日：2021-06-14
发明人： Seungmin RYU , Younsoo KIM , Gyuhee PARK , Younjoung CHO , Yutaro AOKI , Wakana FUSE , Kazuki HARANO , Takanori KOIDE , Yoshiki MANABE , Kazuya SAITO , Hiroyuki UCHIUZOU
IPC分类号： C07F9/00 , H01L51/00 , C23C16/455 , C23C16/34
摘要： An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),
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公开(公告)号：US20210032279A1
公开(公告)日：2021-02-04
申请号：US16872504
申请日：2020-05-12
发明人： Soyoung LEE , Hiroshi NIHEI , Masashi SHIRAI , Jaesoon LIM , Younjoung CHO
IPC分类号： C07F15/06 , H01L21/285 , H01L21/768 , C23C16/44 , C23C16/02 , C23C16/18
摘要： A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,
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10.发明公开公开(公告)号：US20230407051A1
公开(公告)日：2023-12-21
申请号：US18206187
申请日：2023-06-06
发明人： Jihyun LEE , Sunggi KIM , Yujin CHO , Sunhye HWANG , Seung SON , Gyunsang LEE , Younjoung CHO , Byungkeun HWANG
IPC分类号： C08K5/5435 , C23C16/40 , C23C16/453 , H01L27/088 , H01L21/8234
CPC分类号： C08K5/5435 , C23C16/401 , C23C16/453 , H01L27/088 , H01L21/8234
摘要： A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):
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