公开(公告)号：US20210343524A1

公开(公告)日：2021-11-04

申请号：US17376403

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo KIM ,  Haeryong KIM ,  Seungmin RYU ,  Sunmin MOON ,  Jeonggyu SONG ,  Changsu WOO ,  Kyooho JUNG ,  Younjoung CHO

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

公开(公告)号：US20220324887A1

公开(公告)日：2022-10-13

申请号：US17708323

申请日：2022-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Younsoo KIM ,  Jaewoon KIM ,  Kazuki HARANO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yutaro AOKI ,  Gyuhee PARK ,  Younjoung CHO ,  Wakana FUSE ,  Yoshiki MANABE ,  Hiroyuki UCHIUZOU ,  Masayuki KIMURA ,  Takahiro YOSHII

IPC: C07F9/00 ,  H01L49/02 ,  H01L27/108 ,  C23C16/34 ,  C23C16/455

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):

公开(公告)号：US20210284667A1

公开(公告)日：2021-09-16

申请号：US17193531

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Jaewoon KIM ,  Gyuhee PARK ,  Younjoung CHO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yoshiki MANABE ,  Yutaro AOKI ,  Hiroyuki UCHIUZOU ,  Wakana FUSE

IPC: C07F9/141 ,  C23C16/18 ,  H01L21/285

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.

公开(公告)号：US20210388010A1

公开(公告)日：2021-12-16

申请号：US17346400

申请日：2021-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Younsoo KIM ,  Gyuhee PARK ,  Younjoung CHO ,  Yutaro AOKI ,  Wakana FUSE ,  Kazuki HARANO ,  Takanori KOIDE ,  Yoshiki MANABE ,  Kazuya SAITO ,  Hiroyuki UCHIUZOU

IPC: C07F9/00 ,  H01L51/00 ,  C23C16/455 ,  C23C16/34

Abstract: An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

公开(公告)号：US20240067663A1

公开(公告)日：2024-02-29

申请号：US18231339

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Seungmin RYU ,  Gyuhee PARK ,  Younjoung CHO ,  Atsushi YAMASHITA

IPC: C07F5/00 ,  C01F17/218 ,  H01L21/02

CPC classification number: C07F5/003 ,  C01F17/218 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  C23C16/405

Abstract: An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):

公开(公告)号：US20230040334A1

公开(公告)日：2023-02-09

申请号：US17859214

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Younsoo KIM ,  Seungmin RYU ,  Atsushi YAMASHITA ,  Gyuhee PARK ,  Younjoung CHO

IPC: C07F17/00 ,  C23C16/40

Abstract: An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

公开(公告)号：US20210040130A1

公开(公告)日：2021-02-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Seungmin RYU ,  Gyuhee PARK ,  Jaesoon LIM ,  Younjoung CHO ,  Akio SAITO ,  Wakana FUSE ,  Yutaro AOKI ,  Takanori KOIDE

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US20210028010A1

公开(公告)日：2021-01-28

申请号：US16791189

申请日：2020-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younsoo KIM ,  Haeryong KIM ,  Seungmin RYU ,  Sunmin MOON ,  Jeonggyu SONG ,  Changsu WOO ,  Kyooho JUNG ,  Younjoung CHO

IPC: H01L21/02

Abstract: A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.