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公开(公告)号：US20210040130A1
公开(公告)日：2021-02-11
申请号：US16881283
申请日：2020-05-22
发明人： Soyoung LEE , Seungmin RYU , Gyuhee PARK , Jaesoon LIM , Younjoung CHO , Akio SAITO , Wakana FUSE , Yutaro AOKI , Takanori KOIDE
摘要： A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.
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公开(公告)号：US20230406822A1
公开(公告)日：2023-12-21
申请号：US18209583
申请日：2023-06-14
发明人： Sunhye HWANG , Sunggi KIM , Yeonghun KIM , Gyunsang LEE , Jihyun LEE , Gyuhee PARK , Seung SON , Younjoung CHO , Byungkeun HWANG
IPC分类号： C07D207/46 , C07D265/32 , C07D403/12 , H01L21/02
CPC分类号： C07D207/46 , C07D265/32 , C07D403/12 , H01L21/0214 , H01L21/02219 , H01L21/02216 , H01L21/0228
摘要： A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):
R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q, Chemical Formula (1)
wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.-
公开(公告)号：US20210388010A1
公开(公告)日：2021-12-16
申请号：US17346400
申请日：2021-06-14
发明人： Seungmin RYU , Younsoo KIM , Gyuhee PARK , Younjoung CHO , Yutaro AOKI , Wakana FUSE , Kazuki HARANO , Takanori KOIDE , Yoshiki MANABE , Kazuya SAITO , Hiroyuki UCHIUZOU
IPC分类号： C07F9/00 , H01L51/00 , C23C16/455 , C23C16/34
摘要： An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),
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公开(公告)号：US20220324887A1
公开(公告)日：2022-10-13
申请号：US17708323
申请日：2022-03-30
发明人： Seungmin RYU , Younsoo KIM , Jaewoon KIM , Kazuki HARANO , Kazuya SAITO , Takanori KOIDE , Yutaro AOKI , Gyuhee PARK , Younjoung CHO , Wakana FUSE , Yoshiki MANABE , Hiroyuki UCHIUZOU , Masayuki KIMURA , Takahiro YOSHII
IPC分类号： C07F9/00 , H01L49/02 , H01L27/108 , C23C16/34 , C23C16/455
摘要： An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):
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5.发明申请公开(公告)号：US20210284667A1
公开(公告)日：2021-09-16
申请号：US17193531
申请日：2021-03-05
发明人： Seungmin RYU , Jaewoon KIM , Gyuhee PARK , Younjoung CHO , Kazuya SAITO , Takanori KOIDE , Yoshiki MANABE , Yutaro AOKI , Hiroyuki UCHIUZOU , Wakana FUSE
IPC分类号： C07F9/141 , C23C16/18 , H01L21/285
摘要： An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.
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公开(公告)号：US20240067663A1
公开(公告)日：2024-02-29
申请号：US18231339
申请日：2023-08-08
发明人： Hyunwoo KIM , Kazuki HARANO , Kiyoshi MURATA , Haruyoshi SATO , Seungmin RYU , Gyuhee PARK , Younjoung CHO , Atsushi YAMASHITA
IPC分类号： C07F5/00 , C01F17/218 , H01L21/02
CPC分类号： C07F5/003 , C01F17/218 , H01L21/02192 , H01L21/02205 , H01L21/02271 , H01L21/0228 , C23C16/405
摘要： An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):
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公开(公告)号：US20230040334A1
公开(公告)日：2023-02-09
申请号：US17859214
申请日：2022-07-07
发明人： Hyunwoo KIM , Kazuki HARANO , Kiyoshi MURATA , Haruyoshi SATO , Younsoo KIM , Seungmin RYU , Atsushi YAMASHITA , Gyuhee PARK , Younjoung CHO
摘要： An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):
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公开(公告)号：US20210300955A1
公开(公告)日：2021-09-30
申请号：US17072096
申请日：2020-10-16
发明人： Gyuhee PARK , Younjoung CHO , Haruyoshi SATO , Kazuki HARANO , Hiroyuki UCHIUZOU
摘要： A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):
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